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Carbon nano tube/carbon nitride nano tube with nano junction and preparation and use

A technology of carbon nanotubes and nanotubes, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of simple process, low cost, and easy preparation and operation

Inactive Publication Date: 2005-06-15
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, it is possible to control the growth of carbon nanotubes with nanojunctions of various bifurcated structures (Satishkumar, B.C.; Thomas, P.J.; Govindaraj, A; Rao, N.R. Appl. Phys. Lett., 2000, 77, 2530), and The preparation of linear carbon nitride nanotubes / carbon nanotube nanojunctions by microwave chemical vapor deposition has been reported (Ma, X.C.; Wang, E.G.Appl.Phys.Lett.2001, 78, 978), but there is no use of phthalocyanine derivatives. Controlled growth of linear nanotubes with nanojunctions as catalysts and carbon sources and report on the electrical properties of the nanojunctions

Method used

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  • Carbon nano tube/carbon nitride nano tube with nano junction and preparation and use
  • Carbon nano tube/carbon nitride nano tube with nano junction and preparation and use
  • Carbon nano tube/carbon nitride nano tube with nano junction and preparation and use

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Example 1: Connect the gas distribution system and feed hydrogen. When the furnace body center temperature reaches 800-1200°C, put the quartz boat containing 0.02 grams of iron phthalocyanine into the area where the furnace mouth temperature is 500-600°C. Under the hydrogen atmosphere, after constant temperature for 1 minute, change the reaction atmosphere, pass into another gas ammonia, after constant temperature for 2 minutes, stop heating, continue to pass hydrogen refrigeration, the flow rate of each gas is 40 milliliters per minute, the obtained product is C / CN with nanojunction X nanotube. figure 1 For the resulting C / CN X TEM images of nanotubes, figure 2 For measuring C / CN X Nanotube current-voltage curves.

Embodiment 2

[0026] Example 2: According to the preparation method of Example 1, just pass ammonia gas first, that is, dope nitrogen element first, and then pass into hydrogen gas, 40% of the obtained product is C / CN with nano junctions X nanotube.

Embodiment 3

[0027] Embodiment 3: according to the preparation method of embodiment 1, just change the amount of phthalocyanine iron into 0.05 grams, 35% are the C / CN with nano-junction in the obtained product X nanotube.

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Abstract

A carbon nano -nanotuba with nano -knot / carbonide nano -nanotubes, half of the direction of the axis of the tube is composed of carbon elements, and the other half is a carbon nanoma; the carbon nanotuba part is a straight pipe structure, doped nitrogen, doped nitrogenSome have bamboo -like structures; their diameter is 10 to 100 nanometers, and the length is 5 to 400 microns; its electrical performance is a non -linear rectification effect.The preparation method is to pass the hydrogen or ammonia in the heating furnace, and the metal cymbals are decomposed in areas of 500 to 600 ° C. The growth temperature is 800 to 1200 ° C, the hydrogen or ammonia atmosphere is under the atmosphere of hydrogen or ammonia.The atmosphere, connect to another gas ammonia or hydrogen. After the constant temperature for 1 to 60 minutes, stop heating and continue to cool the hydrogen to cause cold; the hydrogen flow is greater than 0 ml-500 ml / minute; the ammonia gas is 0 to 500 ml / minute.The nanopot can be used as a constructing nano -device.

Description

technical field [0001] The invention relates to a nano device, in particular to a carbon nanotube / carbon nitride nanotube with a nano junction. [0002] The present invention also relates to a method for preparing the aforementioned nanotubes. [0003] The present invention also relates to the application of the above-mentioned nanotubes in the construction of nanodevices. Background technique [0004] With the continuous miniaturization of devices, nanoelectronic devices will replace microelectronic devices, and human society will gradually enter the era of nanometer devices. Like microelectronics, nanodevices are expected to use various nanojunctions as structural units, and the controllable preparation of various nanojunctions is a prerequisite for the realization of nanodevices. The fabrication of nanojunctions is a current research hotspot. Due to its unique electrical and mechanical properties, carbon nanotubes are potential nano-device materials. Theoretical and e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/00H01L21/00
Inventor 刘云圻胡平安肖恺王贤保付磊朱道本
Owner INST OF CHEM CHINESE ACAD OF SCI
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