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Method for making semiconductor laser device

一种激光器件、制造方法的技术，应用在半导体激光器、半导体激光器装置、激光器零部件等方向，能够解决增加内部电阻、增加热量值等问题

Inactive Publication Date: 2005-11-02
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This means that a layer in which the GaAs substrate 1 is mixed with the reattached impurity Zn is formed on the interface between the lowermost GaAs buffer layer 11 of the AlGaInP-based semiconductor laser 18 and the GaAs substrate 1, and the internal resistance is increased, resulting in added calorie value
In the above cases, questions arise regarding the reliability of long-term operation

Method used

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  • Method for making semiconductor laser device
  • Method for making semiconductor laser device
  • Method for making semiconductor laser device

Examples

Experimental program
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no. 1 example

[0040] Figures 1A to 1C and Figures 2D to 2F Shows a cross section of a semiconductor laser device in the manufacturing process, which is formed by the semiconductor laser device manufacturing method of this embodiment. First, if Figure 1A As shown, an n-type GaAs buffer layer 22, an n-type AlGaAs cladding layer 23, an AlGaAs guiding layer 24, and a multi-quantum well active layer 25 are sequentially formed on an n-type GaAs substrate 21 by MOCVD (metal organic chemical vapor deposition). , a p-type AlGaAs guide layer 26, a p-type AlGaAs cladding layer 27, and a p-type GaAs contact layer 28, forming an AlGaAs-based semiconductor laser 29 as an example of the first semiconductor laser layer. In the above case, the uppermost p-type GaAs contact layer 28 is doped with Zn so that the carrier density is 5×10 18 cm -3 .

[0041] Further, on the p-type GaAs contact layer 28 of the AlGaAs-based semiconductor laser 29, an undoped GaAs protective layer 30 serving as an example o...

no. 2 example

[0055] This embodiment relates to a method of manufacturing a semiconductor laser device having two light emitting portions of an AlGaAs-based semiconductor laser and an AlGaInP-based semiconductor laser, which is different from the first embodiment.

[0056] Figures 3A to 3C and Figures 4D to 4F A cross section of a semiconductor laser device formed by the semiconductor laser device manufacturing method of this embodiment in the device manufacturing process is shown. First, if Figure 3AAs shown, n-type GaAs buffer layer 52, n-type AlGaAs cladding layer 53, AlGaAs guiding layer 54, multi-quantum well active layer 55, p-type AlGaAs guiding layer 56, p-type AlGaAs guiding layer 56, p -type AlGaAs cladding layer 57 and p-type GaAs contact layer 58 to form an AlGaAs-based semiconductor laser 59. In the above case, the p-type GaAs contact layer 58 is doped with Zn so that the carrier density is 5×10 18 cm -3 .

[0057] In addition, on the p-type GaAs contact layer 58 of th...

no. 3 example

[0071] In this embodiment, the AlGaInP-based semiconductor laser is grown on the GaAs substrate by the first crystal growth, and then the AlGaAs-based semiconductor laser is grown by the second crystal growth. In the above case, the conductivity type of the semiconductor laser through the first crystal growth and the conductivity type of the semiconductor laser through the second crystal growth are opposite to those of the second embodiment, and the first crystal growth is obtained from the second embodiment MOCVD has changed to MBE (Molecular Beam Epitaxy) method. A brief description is given below.

[0072] First, with Figure 3C In the same situation (note that the conductivity type is reversed), an AlGaInP-based semiconductor laser is grown on a p-type GaAs substrate by the MBE method. In the above case, the uppermost n-type GaAs contact layer is doped with Si so that the carrier density is 5×10 18 cm -3 . Then, a non-doped AlGaAs etching stop layer with a film thickn...

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Abstract

The invention discloses a manufacturing method of a semiconductor laser device. An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21, and thereafter, a non-doped GaAs protective layer 30 is formed. When the n-type substrate 21 is exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser 29, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer 28. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layer 28 can be prevented. Furthermore, the impurity evaporated from the p-type contact layer 28 can be prevented from readhering onto the exposed n-type substrate 21. A layer where the n-type GaAs substrate 21 and the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laser 38 is succeedingly formed, and the reliability in long-term operation can be improved.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor laser device capable of forming a plurality of semiconductor lasers on one semiconductor substrate. Background technique [0002] In recent years, optical discs have been widely used, and there are many differences in their recording formats. When optically reading discs of different standards, lasers of different standards are required. For example, in order to read two types of optical discs, CD (Compact Disc) and DVD (Digital Video Disc), an infrared laser emitting at a wavelength around 780 nm and a red laser emitting at a wavelength around 650 nm are required. [0003] Under the above circumstances, it is necessary to provide a semiconductor laser device capable of emitting laser beams of two wavelengths in one package in order to reduce the size and cost of the pickup device. [0004] Furthermore, it is necessary to provide a semiconductor laser device capable of emittin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B7/125H01S5/22H01S5/323H01S5/343H01S5/40
CPCH01S5/323H01S2304/00H01S5/3432H01S5/4087H01S5/4031B82Y20/00
Inventor 宫嵜启介和田一彦森本泰司
Owner SHARP KK