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Structure of jointed pads and preparation method

A pad structure and pad layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of dielectric layer detachment, poor product and conductive connection, cracking of bonding pads, etc., to increase the density, The effect of reducing the possibility and preventing electromigration

Inactive Publication Date: 2005-12-14
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, during the wiring process of the bonding pads, the bonding pads may be broken or separated from the dielectric layer due to the impact of the bonding pressure, resulting in poor product and conduction

Method used

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  • Structure of jointed pads and preparation method
  • Structure of jointed pads and preparation method
  • Structure of jointed pads and preparation method

Examples

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Embodiment Construction

[0035] Reference examples will be presented in detail in the preferred embodiments of the present invention and illustrated in the accompanying drawings. Wherever practicable, identical or similar reference signs used in icons and descriptions refer to identical or similar parts. Also, icons are presented in schematic form rather than exact dimensions. Regarding the use of directional terms in icons, such as top, bottom, left, right, up, down, above, below, below, back, and front, references disclosed herein Examples are for convenience and clarity only. Such directional terms should not be construed as limiting the scope of the invention in any way.

[0036] Although the content disclosed here is about the embodiments of icons, it can be understood that these embodiments are presented by way of example rather than limitation. It is the intent of the ensuing detailed description to cover all changes, alternatives, and equivalents as defined as appended items within the spir...

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PUM

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Abstract

A bond pad structure and method of manufacturing the same is provided. The bond pad consists of a ILD which has many isolated dielectric protuberances and is deposited on a upper conductive layer, a barrier layer which is deposited on the isolated dielectric protuberances, a conductor located between the barrier layer and the isolated dielectric protuberances, and a metal layer that defined to many bond pads, wherein the isolated dielectric protuberances would be a grid pattern, the conductor is located in trenches of the grid pattern, and the metal layer is located on the grid pattern.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to the formation of a bond pad for connecting a semiconductor device to an external conductive wire through a bond site. Background technique [0002] It is known to make bonding pads by providing an upper conductor layer on the substrate. Then, an interlayer dielectric (ILD for short) is coated on the upper conductive layer. Subsequently, one or more contact structures are formed in the inner dielectric layer to electrically connect the bonding pads with the upper conductor layer. [0003] However, during the wiring process of the bonding pads, the bonding pads may be broken or separated from the dielectric layer due to the impact of the bonding pressure, resulting in poor product and connection. Contents of the invention [0004] Therefore, the object of the present invention is to provide a bonding pad structure and a manufacturing method the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/3205H01L21/60H01L23/28
CPCH01L24/05H01L2224/04042H01L2224/05554H01L2224/45124H01L2224/48453H01L2224/4847H01L2224/49171H01L2924/01013H01L2924/01074H01L2924/14H01L2924/00
Inventor 林明裕何濂泽丁茂益
Owner MACRONIX INT CO LTD