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Method for preparing ferroelectric thin film / thick film

A ferroelectric thin film and ferroelectric film technology, applied in metal material coating process, coating, liquid chemical plating and other directions, can solve the problem of inability to achieve densification, difficulty in ferroelectric thick film arrays, and ferroelectric microcrystalline distribution. Non-uniformity and other problems, to achieve the effect of uniform thickness

Inactive Publication Date: 2005-12-28
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] But this method has the following disadvantages: 1. At present, the powder sol process is all carried out on a flat substrate, but on a flat substrate, the fluid sol is difficult to completely submerge and infiltrate the ferroelectric microcrystalline particles, so after heat treatment, the sol The combustion products cannot completely fill the gaps between the ferroelectric crystallites, so that the densification effect cannot be achieved; 2. During the process of rotating the colloid, due to the centrifugal force, the distribution of the ferroelectric crystallites on the substrate will be reduced. Severely uneven, thick in the middle and thin at the edge; 3. Because the film of the thick film is thick, it is difficult to form a ferroelectric thick film array by traditional etching methods; 4. It is difficult to prepare thick films of different thicknesses on the same substrate

Method used

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  • Method for preparing ferroelectric thin film / thick film
  • Method for preparing ferroelectric thin film / thick film
  • Method for preparing ferroelectric thin film / thick film

Examples

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example 1

[0023] Example 1 prepares the method for barium strontium titanate (BST) thick film, comprises:

[0024] (1) Etching out groove array 1 on silicon substrate 2 with common wet chemical method or dry method, such as reactive ion etching or plasma etching, groove plane is square (500 * 500 microns), The groove depths are 10 microns and 20 microns, respectively, as shown in Figure 1(a) and Figure 1(b);

[0025] (2) First prepare barium strontium titanate (BST) sol with a concentration of 0.4mol / L, part of which is dried into a gel, and undergoes heat treatment at 500°C to 700°C to obtain BST ferroelectric micropowder, or through the usual chemical Co-precipitation method to obtain BST ferroelectric powder, then mix BST ferroelectric powder with BST sol, the weight ratio is 1:1, ball mill or stir for 1-2 hours, to obtain BST powder sol, the powder particle size is 0.5-2 μm;

[0026] (3) An appropriate amount of BST powder sol is dropped on the substrate 2, and a BST thick film is ...

example 2

[0030] Example 2 prepares the method for lead zirconate titanate (PZT) thick film, comprises:

[0031] (1) Etch the groove array 4 on the silicon wafer substrate by wet chemical method, the groove plane is square (500×500 micron) and rectangular (500×1000 micron), and the groove depth is 20 micron, as shown in Figure 2 (a) and Figure 2(b);

[0032] (2) First prepare lead zirconate titanate (PZT) sol, the concentration of which is 0.6mol / L, a part of which is dried into a gel, and undergoes heat treatment at 500°C-700°C to obtain PZT ferroelectric micropowder, and then mix it with PZT The sols are mixed with a weight ratio of 1.5:1, and ball milled for 1 to 2 hours to obtain a PZT powder sol with a particle size of 0.5 to 2 μm;

[0033] (3) An appropriate amount of PZT powder sol is dropped on the substrate 2, and a PZT thick film is prepared by a tape casting method. The blade 3 in the tape casting equipment is closely attached to the substrate 2 on the grooved side. After th...

example 3

[0036] Example 3 prepares the method for barium strontium titanate (BST) thin film, comprises:

[0037] (1) Etch groove array 5 on silicon wafer substrate 2 by wet chemical method, groove plane is square (500*500 micron), section C-C becomes trapezoidal, groove depth is 2 micron, as shown in Fig. 3 (a ) and Figure 3(b);

[0038] (2) First prepare barium strontium titanate (BST) sol with a concentration of 1mol / L, part of which is dried into a gel, and undergoes heat treatment at 500°C to 700°C to obtain BST ferroelectric micropowder, or obtain it by chemical co-precipitation method BST ferroelectric micropowder, then mix BST ferroelectric micropowder with BST sol, the weight ratio is 2:1, and ball mill for 1-2 hours to obtain BST powder sol, the powder particle size is 0.5~2 μm;

[0039] (3) An appropriate amount of BST powder sol is dropped on the substrate 2, and a BST film is prepared by a casting method. The blade 3 in the casting equipment is closely attached to the subs...

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Abstract

The invention discloses a method for preparing ferroelectric thin film or thick film. The method comprises: engraving a groove array on a substrate; preparing powder sol, that is, mixing ferroelectric micropowder with corresponding ferroelectric material sol to obtain powder Sol; apply the prepared powder sol on the substrate, and prepare thin film or thick film by casting method. The blade in the casting equipment is closely attached to the substrate with grooves. After casting, the substrate has The groove is filled with powder colloid; the thin film or thick film obtained above is subjected to heat treatment; the ferroelectric film in the non-groove part is removed to obtain the ferroelectric thin film or thick film. Using the method can obtain ferroelectric thin films or thick films with uniform and dense cell thickness and different film thicknesses and shapes of array cells.

Description

technical field [0001] The invention relates to a method for preparing ceramic thin film or thick film, in particular to a method for preparing ferroelectric thick film. Background technique [0002] The powder sol process is a ferroelectric thick film preparation process. It is prepared by dispersing the ferroelectric microcrystals into the sol to form a powder sol, and then uniformly dispersing or printing it on the substrate, and then heat-treating to form a thick film. In this method, the sol infiltrates the surroundings and gaps of the ferroelectric crystallites, and after heat treatment, its combustion products can fill the gaps between the ferroelectric crystallites, thereby contributing to the densification of the film. Therefore, it is a promising method to obtain large-grain and dense ferroelectric thin films. [0003] But this method has the following disadvantages: 1. At present, the powder sol process is all carried out on a flat substrate, but on a flat substr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/00
Inventor 张五星王长安周雪梅赵伯芳尹盛
Owner HUAZHONG UNIV OF SCI & TECH