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Method for raising content of lithium in potassium lithium niobate crystal

A potassium lithium niobate wafer technology, applied in the field of increasing the lithium content of potassium lithium niobate wafers, can solve problems such as difficulty in obtaining crystals, destruction of ferroelectric single domain structure, large change in KN crystal refractive index temperature, etc.

Inactive Publication Date: 2006-01-11
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] (1) The refractive index of KN crystal changes greatly with temperature, crystal growth is difficult, and the ferroelectric single domain structure is unstable (the temperature exceeds 40°C or is subjected to mechanical vibration, and its ferroelectric single domain structure will be destroyed, and it needs to be repolarized. to use);
[0007] (2) Potassium lithium niobate crystal is a solid solution crystal with a complex structure. Potassium lithium niobate crystal with high Li content has serious cracking problems during the growth process, and it is difficult to obtain a complete crystal

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  • Method for raising content of lithium in potassium lithium niobate crystal

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[0028] In a platinum crucible of φ100×80mm, there is a K 2 O. Li 2 O and Nb 2 o 5 Mixture block 3, choose [K 2 O]: [Li 2 O]: [Nb 2 o 5 ]=30:16:54 weight ratio. A potassium lithium niobate wafer 5 with double-side polishing or single-side polishing is placed or suspended on a platinum wire 4, and covered with K 2 O. Li 2 O and Nb 2 o 5 The lid of the crucible for mixing powder 7 and thermocouple 8 is sealed with a platinum lid 9 on the top of the crucible and placed in a resistance furnace. The heating resistance furnace is heated to 900°C and kept at constant temperature for 100 hours, Li 2 O diffuses into the potassium lithium niobate wafer 5, thereby increasing the Li content in the potassium lithium niobate wafer 5, which can be used for semiconductor near-infrared laser frequency doubling.

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Abstract

A process for increasing the content of Li in KLiNbO3 chip includes putting the porous block of K2O-Li2O-Nb2O5 mixture in Pt crucible, putting the polished KLiNbO3 chip on Pt wire, adding crucible cover coated by said mixture powder and with thermocouple, sealing by Pt cover, putting in electric furnace, heating to 800-1200 deg.C, holding the temp for 50-100 hrs, and slow cooling.

Description

technical field [0001] The invention relates to a method for increasing the lithium content of a lithium potassium niobate wafer. Potassium lithium niobate crystals with high Li content can directly frequency-double near-infrared lasers to obtain blue light output at room temperature through non-critical phase matching. Background technique [0002] All-solid-state blue-green lasers have stable performance, compact structure, and can be integrated. They have good application prospects in optical storage, optical communication, and laser medical devices. They are currently a research hotspot in the world. With the development of high-power semiconductor diode lasers, seeking nonlinear optical crystals suitable for blue-light frequency doubling of diode lasers has become one of the important development directions for the development of miniature blue-ray lasers. [0003] Potassium niobate crystal (KN) has a large nonlinear coefficient and a high laser damage threshold. It ca...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/30
Inventor 刘军芳徐军周国清何晓明王海丽张连翰杭寅周圣明赵广军
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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