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Electron device

A technology for display devices and power supplies, applied in circuits, electrical components, electrical solid-state devices, etc., to solve problems such as brightness reduction

Inactive Publication Date: 2006-03-08
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are moments at which the luminance of light emitted by the EL element is reduced when the reduction in charge stored in the gate electrode of the EL driving TFT is not sufficient to compensate

Method used

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Embodiment 1

[0149] The following describes the present invention used in embodiment 1 and Figure 4 The structure shown is different from the SRAM structure.

[0150] Image 6 is an equivalent circuit diagram of the SRAM of the first embodiment. SRAM has two n-channel TFTs and two resistors. One n-channel TFT and one resistor form a pair, and there are two n-channel TFT and resistor pairs in one SRAM. The source region of the n-type channel TFT is connected to the high-voltage side Vddh of the power supply, and the drain region of the n-type channel TFT is connected to the low-voltage side Vss of the power supply through a resistor.

[0151] The drain region of an n-type channel TFT is kept at the same potential as the gate electrode of another n-channel TFT. The drain region of one n-channel TFT is an input side for inputting an input signal Vin, and the drain region of the other n-type channel TFT is an output side for outputting an output signal Vout.

[0152] SRAM is designed to ...

Embodiment 2

[0167] In Embodiment 2, the structure of a pixel of an EL display device according to the present invention will be explained.

[0168] On the pixel portion of the EL display device according to the present invention, a plurality of pixels are arranged in an array type structure. Figure 7A An example of a circuit diagram representing a pixel.

[0169] In the pixel 1000, there is provided a switching TFT1001 such as Figure 13A shown. Note that, in the present invention, as the switching TFT 1001, an n-type channel TFT or a p-type channel TFT can be used. exist Figure 7A In this example, an n-channel TFT is used as the switching TFT 1001.

[0170] The gate electrode of the switching TFT 1001 is connected to the gate signal line 1002 for inputting a gate signal. One of the source region and the drain region of the switching TFT 1001 is connected to a source signal line (also referred to as a data signal line) 1003 for inputting a digital data signal, while the other is conn...

Embodiment 3

[0208] In Example 3, an example of manufacturing an EL display device using the present invention is described.

[0209] Figure 9A is a top view of an EL display device using the present invention. exist Figure 9A Among them, reference numeral 4010 is a substrate, 4011 is a pixel portion, 4012 is a source signal side driver circuit, and 4013 is a gate signal side driver circuit. The driving circuit is connected with external devices by means of FPC4017 through lead wires 4014-4016.

[0210] The cladding material 6000, sealing material (also referred to as housing material) 7000, and hermetic sealing material (second sealing material) 7001 are formed so as to surround at least the pixel portion, preferably the driver circuit and the pixel portion at this time.

[0211] also, Figure 9B is a cross-sectional structure of the EL display device of the present invention. Drive circuit TFT4022 (note that the figure shows a CMOS circuit composed of n-type channel TFT and p-type...

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PUM

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Abstract

A display device capable of preventing a reduction of an electric charge stored in a gate electrode of an EL driver TFT due to a leak current of a switching TFT, and capable of preventing a reduction of the brightness of light emitted by an EL element is provided. One region of a source region and a drain region of a switching TFT is connected to an input side of an SRAM, and an output side of the SRAM and a gate electrode of the EL driver TFT are connected. The SRAM stores an input digital data signal until the next digital data signal is input.

Description

technical field [0001] The present invention relates to an EL (Electroluminescence) display device manufactured by forming an EL element on a substrate. More specifically, the present invention relates to an EL display device using a semiconductor element (an element using a semiconductor thin film). Furthermore, the present invention relates to an electronic device utilizing an EL display device in its display portion. The EL devices described in this specification may include trio-based light emitting devices and / or one-based light emitting devices. Background technique [0002] In recent years, the technology for forming TFTs on a substrate has been greatly improved, and its application to active matrix type display devices has been continuously developed. In particular, a TFT using a polysilicon film has a field effect mobility higher than that obtainable in a TFT using a conventional amorphous silicon film, thereby allowing the TFT to operate at a higher operating spe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/32G09G3/30G09G3/20H01L21/77H01L21/84
CPCG09G3/3266G09G3/2018G09G3/2022G09G3/3291G09G2300/0408G09G2300/0842G09G2300/0857G09G2320/0233H01L27/1214G09G3/30
Inventor 山崎舜平小山润
Owner SEMICON ENERGY LAB CO LTD