Unlock instant, AI-driven research and patent intelligence for your innovation.

Slushing compound pattern shaping method and system

A resist pattern and resist technology are applied in the field of resist pattern forming systems, which can solve the problems of complexity, high cost, collapse of resist pattern, etc.

Inactive Publication Date: 2006-09-13
TDK CORPARATION
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the conventional method of forming a resist pattern using a chemically amplified resist has the problem that the time from exposure to PEB must be strictly controlled, and the method itself is complicated and expensive.
However, in this resist pattern forming method, when a non-chemically amplified resist is used to form a resist pattern with a fine shape and a high aspect ratio, there is a problem that the resist pattern collapses due to the surface tension of the rinse solution during the drying process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Slushing compound pattern shaping method and system
  • Slushing compound pattern shaping method and system
  • Slushing compound pattern shaping method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0027] Hereinafter, the present invention will be described in detail by way of examples.

[0028]According to the resist pattern forming method described in the above-mentioned embodiment, the temperature in the PEB is changed every 10°C from 80°C to 140°C, and the baking time of each temperature is set to 2 minutes, 5 minutes, 10 minutes, By changing 20 minutes, 30 minutes, and 60 minutes, a plurality of samples of the original film 1 are produced. At this time, the resist layer 4 was formed using a positive non-chemically amplified resist ZEP520 (manufactured by Zeon Japan) in the resist layer forming step. In the exposure step, the resist layer 4 was irradiated with an electron beam A at a pitch of 90 nm under irradiation conditions under which the groove width formed after development was 55 nm, thereby forming a latent image. In the development process, the base material 2 was immersed in a developer solution at 26° C. using ZED-N50 (manufactured by Zeon, Japan) for 3 m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The resist pattern is formed by using at least a pattern for forming a resist layer 4 on a base material 2 by applying the non-chemical amplification type resist, a process for exposing the resist layer 4, a process for baking the exposed base material 2 at 90-130[deg.]C temperature, and a process for developing the baked base material 2.

Description

technical field [0001] The present invention relates to a resist pattern forming method and a resist pattern forming system for forming a resist pattern on a base material using a resist layer formed of a non-chemically amplified resist. Background technique [0002] As the conductor patterns of semiconductor devices and the grooves of recording media (for example, discrete-groove recording media) are required to be finer, resist patterns used for their manufacture are required to be finer and have a larger aspect ratio. In recent years, as a method suitable for forming such a resist pattern, a chemically amplified resist is used as disclosed in JP-A-11-39728. [0003] 【Patent Document 1】 [0004] Japanese Patent Application Laid-Open No. 11-39728 (pages 3-4) [0005] However, the existing resist pattern forming method using a chemically amplified resist has the following problems. That is, in the existing resist pattern forming method, oxidation occurs due to exposure of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039G03F7/38G03C5/00G03F7/40H01L21/027
CPCG03F7/40
Inventor 中田胜之服部一博
Owner TDK CORPARATION