Preparation method of large diameter zone melting silicon single crystal

Abstract

The invention relates to a method for preparing a silicon single crystal, in particular to a method for preparing a large-diameter zone-melted silicon single crystal for producing high-power, high-voltage, and high-current semiconductor devices. When the diameter of the zone-melting silicon single crystal expands to Φ110mm-130mm, the interface flips. At this time, immediately adjust the anode voltage set by the zone-melting single crystal furnace generator, and set the anode voltage every 5-10 seconds. Electricity increases by 0.1% to 0.3%; when the diameter of the zone melting silicon single crystal expands to Φ110mm, set the downward movement speed of the zone melting single crystal furnace encoder within the range of 2.0 to 2.4mm / min. Its rotation speed is set within the range of 4~6 rpm; during the process of evacuation and inflation, the furnace pressure required for crystal pulling should reach 3.0bar~3.2bar, and when the diameter of the zone-melted silicon single crystal expands to Φ110mm, it starts to fill N2 is added, and its proportion is equivalent to 0.5%-0.6% of Ar. In addition, the thermal field system of the zone melting single crystal furnace has been improved. The zone-melted silicon single crystal prepared by the present invention has all indexes up to the SEMI standard, thus meeting the requirement of large-diameter zone-melted silicon single crystals in the fields of high-power, high-voltage, and high-current power electronic devices used in large-scale hydrothermal power generation projects and in cutting-edge national defense fields. Silicon single crystal demand.

Description

technical field [0001] The invention relates to a method for preparing a silicon single crystal, in particular to a method for preparing a large-diameter zone-melted silicon single crystal for producing high-power, high-voltage, and high-current semiconductor devices. Background technique [0002] As one of semiconductor silicon materials, zone-melted silicon single crystal is mainly used as the main functional material for semiconductor power devices, power integrated devices and semiconductor integrated circuits. With the rapid development of the microelectronics industry, the semiconductor industry has also put forward newer and higher requirements for silicon materials. With the expansion of production scale, semiconductor device manufacturers are gradually requesting to increase the diameter of silicon wafers for the purpose of improving productivity, reducing costs, and increasing profits. Over the years, increasing the diameter of crystals has been an eternal pursuit...

AI Technical Summary

Problems solved by technology

As we all know, using the traditional preparation method of small-diameter zone-melting silicon single crystals below 3″, it is impossible to prepare large-diameter zone-melting silicon single crystals above 3″, especially 5″ and 6″ zone-melting silicon single crystals.

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