Large-diameter zone-melting silicon single crystal growth method

A production method, the technology of zone melting single crystal furnace, which is applied in the field of large diameter zone melting silicon single crystal production, and can solve the problems that cannot be successfully realized.

Active Publication Date: 2007-07-11
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, using the traditional preparation method of small-diameter zone-melting silicon single crystals below 3″, it is impossible to prepare large-diameter zone-melting silicon single crystals above 3″, especially 5″ and 6″ zone-melting silicon single crystals.

Method used

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  • Large-diameter zone-melting silicon single crystal growth method

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Referring to Figure 1. The process flow of molten silicon single crystal in the large diameter area is:

[0016] Furnace cleaning, furnace loading→evacuation, gas filling, preheating→chemical material, seeding→growing thin neck→shoulder expansion and nitrogen filling→shoulder turning, holding and holder release→finishing and shutdown.

[0017] (1) Furnace cleaning and furnace loading

[0018] Clean the entire inner wall of the furnace and the heating coil, reflector, crystal holder, upper shaft and lower shaft, adjust the level of the heating coil and reflector and the alignment with the upper shaft and lower shaft.

[0019] Installation of polycrystalline materials:

[0020] ①Use scissors to cut the plastic bag packing the polycrystalline ingot to expose only the notch at the tail, wear clean disposable plastic gloves, and fix the polycrystalline material fixture (crystal hanger) to the notch at the end of the polycrystalline ingot place.

[0021] ②Insert the polycr...

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Abstract

The invention discloses a manufacturing method of silicon monocrystal, which comprises the following steps: 1. clearing furnace; loading furnace; 2. extracting; aerating; preheating; 3. digesting material; introducing seed; 4. growing thin neck; 5. expanding shoulder; aerating nitrogen; 6. transmitting; keeping; releasing clamper; 7. ending; stopping furnace. The invention realizes the large diameter zone melting silicon monocrystal, which reaches SEMI standard.

Description

technical field [0001] The invention relates to a method for producing silicon single crystals, in particular to a method for producing large-diameter zone-melted silicon single crystals for producing high-power, high-voltage, high-current semiconductor devices and various power electronic devices. technical background [0002] As one of semiconductor silicon materials, zone-melted silicon single crystal is mainly used as the main functional material for semiconductor power devices, power integrated devices and semiconductor integrated circuits. With the rapid development of the microelectronics industry, the semiconductor industry has also put forward newer and higher requirements for silicon materials. With the expansion of production scale, semiconductor device manufacturers are gradually requesting to increase the diameter of silicon wafers for the purpose of improving productivity, reducing costs, and increasing profits. Over the years, increasing the diameter of cryst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/00C30B29/06
Inventor 沈浩平高树良刘为钢高福林李翔汪雨田昝兴立
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
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