Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device with slot structure and producing method thereof

A semiconductor and trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficient improvement of degradation

Inactive Publication Date: 2007-07-11
DENSO CORP
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Third, at the upper and lower ends of the trench, it is easy to generate crystallization defects
However, the sacrificial oxidation method is insufficient to improve the deterioration of the inner wall caused by stress or crystallographic defects near the trench

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device with slot structure and producing method thereof
  • Semiconductor device with slot structure and producing method thereof
  • Semiconductor device with slot structure and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The inventors have preliminarily studied about stress and crystallographic defects in the inner wall of a trench in a trench gate type semiconductor device. Stress and crystal defects are considered to affect the reliability of the insulating film formed on the inner wall of the trench. In particular, the inventors have investigated when stress and crystallographic defects are generated during the process of fabricating devices.

[0033] After the conductive film is formed (ie, embedded) in the trench through the insulating film, stress and crystal defects are generated in the vicinity of the trench. Therefore, it is recognized that strain (ie deformation) is generated in the insulating film due to stress and / or crystal defects. Therefore, the reliability of the insulating film is lowered.

[0034] The above considerations are also applied to another trench gate type semiconductor device having a conductive film formed in a trench through an insulating film and having...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for manufacturing a semiconductor device includes the steps of: forming a trench in a substrate; forming a conductive film in the trench through an insulation film; and annealing the substrate at an annealing temperature after the step of forming the conductive film so that a damage in the insulation film is removed at the annealing temperature. The device H01L 21 / 336 H01L 29 / 78 H01L 29 / 744 H01L 29 / 749 12 19 7 2004 / 3 / 2 1527369 2004 / 9 / 8 1326218 2007 / 7 / 11 2007 / 7 / 11 2007 / 7 / 11 Denso Corp. Japan Aoki Takaaki han hong 72002 NTD Patent & Trademark Agency Ltd. Units 1805-6, 18th Floor, Greenfield Tower, Concordia Plaza, No.1 Science Museum Road, Tsimshatsui, east, Kowloon, Hong Kong 100045 Japan 2003 / 3 / 3 055759 / 2003

Description

technical field [0001] The present invention relates to a semiconductor device having a trench gate structure and a method of manufacturing the same. Background technique [0002] Semiconductor devices having a trench gate structure (for example, trench gate type semiconductor devices are used, for example, in trench gate type power devices such as diffused metal oxide semiconductor (ie, DMOS) transistors and insulated gate bipolar transistors (ie, IGBT). A trench gate type semiconductor device includes a trench formed in a semiconductor substrate. An insulating film is formed on an inner wall of the trench, and a semiconductor film is embedded in the trench through the insulating film. [0003] Trench gate type power devices are disclosed in, for example, Japanese Unexamined Patent Application Publication Nos. 2001-196587, 2001-127072, and 2001-127284. The device has a microscopic gate structure with grooves so that the device has high-density cells. Therefore, the on-sta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/744H01L29/749H01L21/28H01L29/423H01L29/51H01L29/739
CPCH01L29/518H01L21/28185H01L29/7813H01L21/28202H01L29/513H01L29/42368H01L29/7811
Inventor 青木孝明
Owner DENSO CORP