Optical storage medium
An optical disc and speed technology, applied in the field of optical storage media, can solve the problem that rewritable phase-change optical storage media cannot display recording characteristics, etc.
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example 1
[0082] Each layer shown in FIG. 1 was formed on a substrate 1 made of polycarbonate resin having a diameter of 120 mm and a thickness of 0.6 mm. Grooves with a pitch of 0.74 μm and a depth of 25 nm are formed on the substrate 1 , and the ratio of the width of the trench to the width of the area between the two trenches is about 40:60.
[0083] Vacuum the vacuum film forming chamber to 3×10 -4 Pa. The vacuum chamber is filled with argon to 2×10 -1 Pa, ZnS containing 20 mol % SiO2 was applied on the substrate 1 by high frequency magnetron sputtering to form a first protective layer 2 with a thickness of 60 nm.
[0084] A recording layer 3 with a thickness of 16 nm was formed on the first protective layer 2 by co-sputtering of 3-element single-alloy targets Ge, Sb and Te and another 3-element single-alloy target In, Sb and Te {composition ratio: Ge 2 In 5 Sb 76 Te 17 , x=0.817 (ratio of Sb and Te)}.
[0085] Superimposed on the recording layer 3 are a second protective lay...
example 2
[0103] Except recording layer 3 (composition ratio: Ge 2 In 3 Sb 74 Te 21 , x=0.779) was formed by the co-sputtering of a 3-element single alloy target of In, Sb and Te and another Ge target, the disc example 2 was manufactured by the same method as the example 1.
[0104] According to the pulse width recording scheme (Figure 2): A t3 = 1.10[T],A t4 =1.50[T],A tod = 1.00 [T], A tev =1.50[T],A m = 1.00 [T], and C = 0.30 [T], recording is performed at 4x speed.
[0105] When the 4x speed recording was measured in the same manner as in Example 1, Example 2 showed almost the same characteristics as Example 1, as shown in FIG. 5 .
example 3
[0107] Except recording layer 3 (composition ratio: Ge 2 In 3 Sb 79 Te 16 , x=0.832) is formed by the common sputtering of a 3-element single alloy target of In, Sb and Te and another 2-element single alloy target of Ge and Sb, the disc example 3 is manufactured in the same way as example 1 .
[0108] According to the pulse width recording scheme (Figure 2): A t3 =0.80[T],A t4 = 1.00 [T], A tod =0.65[T],A tev = 1.00 [T], A m = 0.80 [T], and C = 1.50 [T], recording is performed at 6x speed.
[0109] When 6x speed recording was measured in the same manner as in Example 1, Example 3 exhibited almost the same characteristics as Example 1, as shown in FIG. 5 .
[0110] According to the pulse width recording scheme (Figure 2): A t3 = 1.00 [T], A tod = 1.00 [T], A t4 =A tev =1.80[T],A m = 1.00 [T], and C = 0.30 [T], further recording was performed at a linear velocity of 28 m / s.
[0111] Perform rewriting 10 times on the target track and adjacent tracks at 8x speed acc...
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Abstract
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