Semiconductor storage device and information apparatus

Abstract

A semiconductor storage device includes: a memory array including a plurality of memory cells; a reference array including a plurality of reference cells; a decoder section for selecting a memory cell from the memory cells and a reference cell from the reference cells based on address information; and a comparison/output section for comparing a read voltage level from the memory cell selected by the decoder section and a read voltage level from the reference cell selected by the decoder section so as to output a result of the comparison in the form of data, wherein the decoder section simultaneously outputs a selection signal to a word line of the memory cell and a selection signal to a word line of the reference cell.

Description

technical field [0001] The present invention relates to a nonvolatile memory in which data is electrically writable (for example, a semiconductor storage device such as flash EEPROM, etc.), and to information equipment using the nonvolatile memory, such as a cellular phone terminal and the like. Background technique [0002] Conventionally, in a nonvolatile semiconductor storage device (nonvolatile memory such as flash EEPROM) in which data is electrically writable, a data read operation is performed as follows: Figure 8 As shown, the same drain voltage is applied to the memory cell RC0 (which is called a "reference cell") set at a predetermined threshold value, and to the memory cell MC0 of the memory array on which the data read operation is performed. , while the same gate voltage is applied by the reference word line decoder and the normal word line decoder, and the difference between the current values ​​flowing through the memory cells RC0 and MC0 is sensed by the sens...

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Problems solved by technology

[0055] However, if unwanted data is once output immediately after the sensing start time (time t(a)), in many cases, additional time is consumed until desired data is successfully output.

This extra time

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