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Control system for indirectly heated cathode ion source

An indirect heating and ion source technology, applied in the field of ion sources, can solve problems such as the difficulty of tuning large beam current transmission

Inactive Publication Date: 2003-07-02
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since beam current and current delivery are affected by so many parameters, tuning large beam current delivery is difficult

Method used

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  • Control system for indirectly heated cathode ion source
  • Control system for indirectly heated cathode ion source
  • Control system for indirectly heated cathode ion source

Examples

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Embodiment Construction

[0025] figure 1 An indirect heated ion source according to one embodiment of the invention is shown. An arc chamber housing 10 with an extraction opening 12 defines an arc chamber 14 . A cathode 20 and a reflective electrode 22 are mounted within the arc chamber 14 . The reflective electrode 22 is electrically insulating. A cathode isolation device 24 electrically and thermally insulates the cathode 20 from the arc chamber housing 10 . Cathode 20 and insulating device 24 are spaced apart to prevent heat conduction.

[0026] Cathode 20 is heated by a filament 30 mounted outside arc chamber 14 in close proximity to cathode 20 .

[0027] Ionized gas is introduced into the arc chamber 12 from the gas source 32 through a gas inlet 34 . In another configuration not shown, the arc chamber 14 may be combined with a vaporizer capable of vaporizing a substance ionizable within the arc chamber.

[0028] An arc power supply 50 includes a positive terminal coupled to the arc chamber ...

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Abstract

An indirectly heated cathode ion source includes an extraction current sensor for sensing ion current extracted from the arc chamber and an ion source controller for controlling the filament power supply, the bias power supply and / or the arc power supply. The ion source controller may compare the sensed extraction current with a reference extraction current and determine an error value based on the difference between the sensed extraction current and the reference extraction current. The power supplies of the indirectly heated cathode ion source are controlled to minimize the error value, thus maintaining a substantially constant extraction current. The ion source controller utilizes a control algorithm, for example a closed feedback loop, to control the power supplies in response to the error value. In a first control algorithm, the bias current IB supplied by the bias power supply is varied so as to control the extraction current IE. Further according to the first control algorithm, the filament current IF and the arc voltage VA are maintained constant. According to a second control algorithm, the filament current IF is varied so as to control the extraction current IE. Further according to the second control algorithm, the bias current IB and the arc voltage VA are maintained constant.

Description

[0001] Related applications involved [0002] This application claims the benefit of Provisional Application Serial No. 60 / 204,936, filed May 17, 2000, and Provisional Patent Application Serial No. 60 / 204,938, filed May 17, 2000. [0003] Technical Field of the Invention [0004] This invention relates to ion sources suitable for use in ion implanters, and more particularly to such ion sources with indirectly heated cathodes. Background technique [0005] The ion source is a critical part of an ion implanter. The ion source generates an ion beam that passes through the beam conduit of the ion implanter and is delivered to the semiconductor wafer. The ion source should be able to produce a stable and well-defined ion beam to be applied to a variety of ion and extraction voltages. In a semiconductor production facility, ion implanters, including ion sources, are used for a long period of time without maintenance and repair. [0006] Ion implanters typically use ion sources w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/02H01J27/08H01J37/08
CPCH01J27/08H01J27/022H01J27/14
Inventor 约瑟夫·C·奥利桑丹尼尔·迪斯塔索安东尼·丽奥
Owner VARIAN SEMICON EQUIP ASSOC INC
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