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Semiconductor laser device and its manufacturing method and optical disk regenerating and recording equipment

A technology of laser devices and manufacturing methods, applied to semiconductor lasers, optical recording/reproduction, laser components, etc., which can solve problems such as semiconductor laser device deterioration and reliability

Inactive Publication Date: 2003-09-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem is associated with increased degradation and deteriorating reliability of semiconductor laser devices

Method used

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  • Semiconductor laser device and its manufacturing method and optical disk regenerating and recording equipment
  • Semiconductor laser device and its manufacturing method and optical disk regenerating and recording equipment
  • Semiconductor laser device and its manufacturing method and optical disk regenerating and recording equipment

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Experimental program
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Effect test

Embodiment 2

[0076] Figure 8 is a cross-sectional view of a semiconductor laser device according to Embodiment 2 of the present invention. The semiconductor laser device is constructed by sequentially stacking an n-type GaAs buffer layer 202, an n-type Al 0.5 Ga 0.5 As lower cap layer 203, Al 0.4 Ga 0.6 As lower guiding layer 204, multiple strained quantum well active layer 205, Al 0.4 Ga 0.6 As upper guide layer 206, p-type Al 0.5 Ga 0.5 As first upper cap layer 207 and p-type GaAs etch stop layer 208 . On this etch stop layer 208, p-type Al 0.478 Ga 0.522 The second upper cap layer 209 and the GaAs protective layer 210 . Moreover, in Al 0.478 Ga 0.522 The two sides of the As second upper cap layer 209 and the GaAs protective layer 210 are buried by n-type Al 0.7 Ga 0.3 As first barrier layer 212, n-type GaAs second barrier layer 213 and p-type GaAs planarization layer 214 form a mesa-shaped light-current confinement region, and a p-type GaAs cap layer 216 is arranged there...

Embodiment 3

[0097] Figure 10 An optical disc recording and reproducing apparatus according to Embodiment 3 of the present invention is shown. The optical disc recording and reproducing apparatus for writing data onto an optical disc 401 or reproducing written data from the optical disc 401 includes the semiconductor laser device 402 described above as the semiconductor laser device of Embodiment 1 as a light emitting device.

[0098] The optical disk recording and reproducing apparatus will be described in more detail below. For writing, the signal-carrying laser beam emitted by the semiconductor laser device 402 is made into parallel light by a collimator lens, and transmitted through the beam splitter 404 . The polarization of this light beam transmitted with the beam splitter 404 is adjusted with the λ / 4 polarizer 405 and then focused with the objective lens 406 to apply the light to the optical disc 401 . Thus, data is recorded on the optical disc 401 .

[0099] On the other hand,...

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Abstract

At a growth temperature of 650° C., after stacking the GaAsP of the multiple strain quantum well active layer 105 to constitute the barrier layer, the second upper guide layer 126 of AlGaAs is stacked immediately. The second upper guide layer 126 is grown at a temperature maintained at a growth temperature suitable for the growth of the P-based layer, ie, 650°C. By reducing P desorption from the barrier layer, the interface roughness between the barrier layer and the second upper guide layer 126 is reduced to 20 Å or less. The first upper guide layer 106 is then laminated. The growth temperature of the first upper guide layer 106 is 650°C at the beginning, and the growth temperature increases with the growth until the temperature reaches 750°C at the end of the growth.

Description

technical field [0001] The present invention relates to a semiconductor laser device, in particular to a semiconductor laser device with high power, high reliability and long life and its manufacturing method, and also relates to optical disk reproducing and recording equipment. Background technique [0002] In recent years, AlGaAs-based high-power and long-life semiconductor laser devices constituted by forming Al-free (Al-deficient) quantum well structures (well layers and barrier layers) have been developed. The reason for this is that the presence of Al at the oscillator end can cause surface levels at the oscillator end face, which can cause catastrophic optical damage (COD), negatively affecting high power, long life, and high reliability. [0003] For example, Japan Journal of Applied Physics Vol. 38 (1999) pp. L387-L389 reports a semiconductor laser device with an Al-free active region. Such as Figure 11 As shown, by stacking GaAs buffer layers 302 one by one on a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B7/125H01S5/223H01S5/34H01S5/343
CPCB82Y20/00H01S5/2231H01S5/34H01S5/3403H01S5/3434H01S5/34373H01S5/34386
Inventor 蛭川秀一
Owner SHARP KK