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Driving method of flash memory device

A driving method and technology for storage devices, applied in information storage, static memory, read-only memory, etc., can solve problems such as data inconsistency, and achieve the effect of improving service life, reducing the number of erasures, and reducing the number of block erasures.

Inactive Publication Date: 2004-04-28
ZTE CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0012] Although the erase operation is very slow, if you do not follow the above process, but simply write the data directly without erasing, the written data will not match the data stored in the FLASH.

Method used

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  • Driving method of flash memory device
  • Driving method of flash memory device
  • Driving method of flash memory device

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Embodiment Construction

[0031] In order to increase the speed in the FLASH driver, the block erase before the write operation should be avoided as much as possible, because the block erase will take a lot of time. Therefore, the crux of the problem is that the principle of whether to perform block erasure must be worked out. That is to say, when the block erase operation is necessary and when it is not necessary to perform block erase. When it is judged that there is no need to erase the block, the speed of the FLASH drive will be greatly improved.

[0032] After an in-depth understanding of FLASH devices, it is found that the minimum write operation unit of FLASH is not a byte or a word, but the characteristics of a bit. In order to illustrate this operating characteristic of FLASH, the e28f128FLASH device is taken as an example to explain as follows:

[0033] As shown in Table 3, a data 0xaa has been saved in FLASH, and data 0x82 is written in the same position. After writing, you can see that t...

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Abstract

The driving method of flash memory device includes the following steps: defining blocks of the data to be written based on the size of FLASH; reading out and storing the data in the corresponding FLASH blocks; comparing the stored data in the corresponding position and the data to be written and judging whether no change from 0 to 1 in all the bits of the blocks; if so, writing the data needing writing into the corresponding positions in the blocks directly, or if not, scrubbing the blocks to be scrubbed after data protection and writing the data needing writing into the corresponding positions. For the data writing in the case of great data amount and less modification and the data writing in the case of small data amount and multiple times of writing, the present invention can raise the FLASH writing speed and prolong the service life of FLASH obviously.

Description

technical field [0001] The invention relates to a driving method of a storage device, in particular to a driving method for writing in a slow flash storage device (FLASH storage device). Background technique [0002] As a storage medium, FLASH is characterized by the fact that the data stored in it will not be lost when the device is powered off. Its unique ability to save data makes FLASH more and more widely used. For small-capacity FLASH devices, since they are slow devices, the requirements for driving speed may not be very high; but for large-capacity devices, the disadvantage of slow driving speed is more prominent. [0003] Usually, the write operation steps in the FLASH driver are as follows: [0004] FLASH erase. Before writing data, the area to be written must be erased. But the erasing of FLASH is subject to great restrictions, can not erase the data of arbitrary position, arbitrary area, can only erase the whole data area (block), such as erasing 128k bytes (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10
Inventor 谢锐陈诗军李灿伟
Owner ZTE CORP
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