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Plasma processing method and apparatus

A technology of plasma and treatment method, applied in the field of plasma treatment and equipment, can solve the problems of reducing the working rate of plasma treatment, etc., and achieve the effects of saving work and time, avoiding the reduction of etching rate, and improving the working rate

Inactive Publication Date: 2004-06-09
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0008] But the dry process requires a dummy wafer for the dry process and at least a few minutes of processing time
Therefore, additional work and time are required, thus reducing the work rate for a series of plasma treatments

Method used

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  • Plasma processing method and apparatus
  • Plasma processing method and apparatus
  • Plasma processing method and apparatus

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Embodiment Construction

[0038] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In order to avoid repeated descriptions, in the description and the drawings, parts whose functions and structures are basically the same are denoted by the same reference numerals.

[0039] FIG. 1 shows a cross-sectional view of a plasma processing apparatus 100 according to a first embodiment of the present invention. The plasma processing apparatus 100 has a sealed processing chamber 102 . The processing chamber 102 is a graded cylindrical processing chamber having an upper portion 102a having a smaller diameter and a lower portion 102b having a larger diameter. The processing chamber 102 has walls made of aluminum covered with yttrium oxide (Y2 o 3 )film. The processing chamber 102 is electrically grounded.

[0040] The rack 104 is installed in the processing chamber 102 . The holder 104 horizontally supports an object to be proc...

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Abstract

A plasma processing method allows to suppress the drop of the etching rate of the depoless-process without performing an additional seasoning process right after the dry cleaning process. The method includes a first and a second plasma processing step carried out in a single chamber and a step of dry cleaning an inside of the chamber by using a dummy substrate between the first and the second plasma processing step. Deposits are substantially accumulated in the chamber during the first plasma processing step, while substantially no deposits are accumulated in the chamber during the second plasma processing step. The dry cleaning step is performed by supplying into the chamber a deposit removing gas for removing the deposits produced in the chamber during the first plasma processing step and a dummy substrate etching gas capable of etching the dummy substrate.

Description

technical field [0001] The present invention relates to a plasma treatment method and equipment, in particular to a method and equipment for eliminating pollutants such as deposits accumulated on the side walls of a treatment chamber during plasma treatment. Background technique [0002] In the manufacturing process of semiconductor devices, defects in device patterns are caused by foreign substances such as semiconductor wafers adhering to substrates, thereby causing a decrease in yield. Therefore, extensive research has recently been conducted on plasma manufacturing processes using, for example, dry etching and CVD. In particular, plasma reactions of various gases involved in production equipment are used to perform microprocessing such as thin film deposition and etching. [0003] In this process, in addition to the objects to be microprocessed, deposits (precipitated films) may also adhere to the inner walls of production equipment. This is because, for example, the m...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/00
CPCH01L21/67028H01J37/32862H01L21/67069Y10S438/905Y10S134/902
Inventor 崎间弘美
Owner TOKYO ELECTRON LTD