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CNFET type double-edge pulse type JKL trigger

A double edge, trigger technology, applied in the direction of pulse generation, pulse technology, generation of electrical pulses, etc., can solve problems such as limiting process development

Active Publication Date: 2016-11-09
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of Moore's law, integrated circuit technology has entered the deep submicron stage, and the small size effect of MOS tubes limits the further development of the technology

Method used

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  • CNFET type double-edge pulse type JKL trigger
  • CNFET type double-edge pulse type JKL trigger
  • CNFET type double-edge pulse type JKL trigger

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment one: if figure 1 As shown, a CNFET double-edge pulse JKL flip-flop includes a double-edge pulse signal generator, a first CNFET tube N1, a second CNFET tube N2, a third CNFET tube N3, a fourth CNFET tube N4, and a fifth CNFET tube. Tube N5, sixth CNFET tube N6, seventh CNFET tube N7, eighth CNFET tube N8, ninth CNFET tube N9, tenth CNFET tube N10, eleventh CNFET tube N11, twelfth CNFET tube N12, thirteenth CNFET tube CNFET tube N13, fourteenth CNFET tube N14, fifteenth CNFET tube N15, sixteenth CNFET tube N16, seventeenth CNFET tube N17, eighteenth CNFET tube N18, nineteenth CNFET tube N19, twenty CNFET tube Tube N20, twenty-first CNFET tube N21, twenty-second CNFET tube N22, twenty-third CNFET tube N23, twenty-fourth CNFET tube N24, twenty-fifth CNFET tube N25, twenty-sixth CNFET tube N26 , the twenty-seventh CNFET tube N27, the twenty-eighth CNFET tube N28, the twenty-ninth CNFET tube N29, the thirty-first CNFET tube N30, the thirty-first CNFET tube N31, s...

Embodiment 2

[0030] Embodiment two: if figure 1As shown, a CNFET double-edge pulse JKL flip-flop includes a double-edge pulse signal generator, a first CNFET tube N1, a second CNFET tube N2, a third CNFET tube N3, a fourth CNFET tube N4, and a fifth CNFET tube. Tube N5, sixth CNFET tube N6, seventh CNFET tube N7, eighth CNFET tube N8, ninth CNFET tube N9, tenth CNFET tube N10, eleventh CNFET tube N11, twelfth CNFET tube N12, thirteenth CNFET tube CNFET tube N13, fourteenth CNFET tube N14, fifteenth CNFET tube N15, sixteenth CNFET tube N16, seventeenth CNFET tube N17, eighteenth CNFET tube N18, nineteenth CNFET tube N19, twenty CNFET tube Tube N20, twenty-first CNFET tube N21, twenty-second CNFET tube N22, twenty-third CNFET tube N23, twenty-fourth CNFET tube N24, twenty-fifth CNFET tube N25, twenty-sixth CNFET tube N26 , the twenty-seventh CNFET tube N27, the twenty-eighth CNFET tube N28, the twenty-ninth CNFET tube N29, the thirty-first CNFET tube N30, the thirty-first CNFET tube N31, si...

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Abstract

The invention discloses a carbon nanotube field effect transistor (CNFET) type double-edge pulse type JKL trigger. The CNFET type double-edge pulse type JKL trigger comprises a double-edge pulse signal generator, thirty-first CNFET tubes, six NTI gate circuits with the same circuit structure, six PTI gate circuit with the same circuit structure, a first ternary phase inverter and a second ternary phase inverter, wherein the first ternary phase inverter and the second ternary phase inverter have the same circuit structure. The CNFET type double-edge pulse type JKL trigger has the advantages: a clock signal is generated by utilizing the double-edge pulse signal generator; by combining switching operation of a multi-value logic circuit and high-speed low-power features of CNFET, a purpose of reducing the power consumption is achieved when the working speed of the JKL trigger is improved; and based on experiment results, the JKL trigger provided by the invention has a correct logic function and remarkable characteristic of low power consumption.

Description

technical field [0001] The invention relates to a JKL trigger, in particular to a CNFET double edge pulse JKL trigger. Background technique [0002] With the development of Moore's law, the integrated circuit process has entered the deep submicron stage, and the small size effect of the MOS tube limits the further development of the process. Carbon Nanotube Field Effect Transistor (CNFET, Carbon Nanotube Field Effect Transistor), as a new type of device, has attracted widespread attention from designers due to its ballistic transmission characteristics, small leakage current and channel capacitance, which are beneficial to the design of high-performance and low-power integrated circuits, and has become a substitute One of the candidate materials for silicon-based. [0003] High-performance flip-flops are of great significance to high-speed and low-power sequential circuits. With the advantage of short settling time and single-latch structure, pulse flip-flops are receiving...

Claims

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Application Information

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IPC IPC(8): H03K3/012
CPCH03K3/012H03K3/356104H10K85/221H10K10/462
Inventor 汪鹏君王谦陈伟伟龚道辉
Owner NINGBO UNIV
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