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Method and equipment for manufacturing semiconductor devices

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of damage flexural strength, chip surface pollution, distortion, etc., and achieve the effect of preventing cracking and inhibiting the reduction of flexural strength.

Inactive Publication Date: 2004-09-01
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] As described above, in the conventional semiconductor device manufacturing method and semiconductor device manufacturing equipment, distortion and chipping due to cutting streaks occur on the back and side surfaces of the semiconductor chip, and there is a problem of lowering the chip's flexural strength.
[0015] And adopt the way that semiconductor wafer back side is ground and grind, although can remove the cutting streak on the back side side, because can't remove the cutting streak that occurs on the chip side, so there is this limit to improving chip bending strength. a question
[0016] Furthermore, the method of cutting the semiconductor wafer by laser beam irradiation may solve the problem of cutting streaks, but it needs to irradiate a laser beam with a high output power, which inevitably causes contamination, damage, and formation of unevenness on the chip surface due to evaporation. This problem that causes a decrease in the flexural strength

Method used

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  • Method and equipment for manufacturing semiconductor devices
  • Method and equipment for manufacturing semiconductor devices
  • Method and equipment for manufacturing semiconductor devices

Examples

Experimental program
Comparison scheme
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no. 1 Embodiment

[0038] figure 1 with figure 2are diagrams for explaining the semiconductor device manufacturing method and the semiconductor device manufacturing equipment according to the first embodiment of the present invention, respectively, figure 1 Indicates the scribing process, figure 2 It shows the process of scribe area processing by irradiating a laser beam to a scribe area.

[0039] First, various semiconductor elements are formed in a semiconductor wafer according to well-known manufacturing processes.

[0040] Next, an adhesive sheet 22 is attached to the back surface of the element formation surface of the semiconductor wafer 21 on which the above-mentioned elements have been formed by means of a sheet adhesive device, and the adhesive sheet 22 is adsorbed and fixed on a dicing table. And, from the main surface side of the semiconductor wafer 21, use a dicing machine (such as a diamond knife 23), perform dicing along the scribing line 24, and separate them into individua...

no. 2 Embodiment

[0049] In the first embodiment described above, the case where the semiconductor wafer 21 is fully cut during dicing has been described as an example. However, it can also be similarly applied to a manufacturing process in which the semiconductor wafer 21 is cut in half to form grooves, and the back surface is ground and divided (pre-scribing method).

[0050] That is, according to well-known manufacturing processes, after forming various semiconductor devices on a semiconductor wafer, the semiconductor wafer 21 is diced from the main surface side along dicing lines or chip dividing lines to form half dicing grooves. In order to form the half-cut groove, for example, use such as figure 1 A diamond knife 23 as shown. The depth of the notch is only about 10-30 μm (at least 5 μm) deeper than the final processing thickness of the chip. How much depends on the precision of the dicing machine and the grinding machine.

[0051] Then, if figure 2 As shown, the laser beam 28 is i...

Deformed example 1

[0065] By installing a treatment tank for storing semiconductor wafers in water and irradiating laser beams in the water, temperature control will be facilitated, and the increase in chip temperature caused by laser beam irradiation can be suppressed.

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Abstract

Provided is a method of manufacturing a semiconductor device capable of suppressing a reduction in the deflecting strength of a chip and preventing cracking of a semiconductor chip in an assembling process, a reliability test, etc. The processes of forming semiconductor devices in a semiconductor wafer 21 and making dicing cuts in the semiconductor wafer along dicing lines 24 are implemented. Then, a laser beam 28 is irradiated on the dicing-processed regions 26 of the semiconductor wafer to fuse or evaporate the cut streaks formed by the dicing. Because the irradiation of a laser beam onto the upper edges and side surfaces of the semiconductor chips 25-1, 25-2, 25-3, etc.after the dicing process for dividing the semiconductor wafer causes fusion or evaporation of the cut sections entailing elimination of the strain and chipping originated from the cut streaks, it is enabled to enhance the deflecting strength of a semiconductor chip.

Description

technical field [0001] The present invention relates to a semiconductor device manufacturing method and semiconductor device manufacturing equipment, in particular to a dicing process and a dicing machine for dividing a semiconductor wafer to form a semiconductor chip. Background technique [0002] The dicing process in the manufacturing process of existing semiconductor devices, such as Figure 10 (a), (b), (c) as shown. That is, if Figure 10 As shown in (a) and (b), along one direction of the scribe line 12-1, 12-2, . Then, by turning the wafer 11 by 90°, such as Figure 10 As shown in (c), dicing is performed in a direction perpendicular to the dicing direction, and the semiconductor chips 14 - 1 , 14 - 2 , 14 - 3 , . . . are separated. [0003] For the above-mentioned dicing process, generally, there are a full dicing method in which the wafer 11 is completely cut off, and a half dicing method in which dicing is performed until the thickness of the wafer 11 is about 1 / ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/301H01L21/302H01L21/304H01L21/46H01L21/78
CPCH01L21/78
Inventor 田久真也佐藤二尚
Owner KK TOSHIBA
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