Method and equipment for manufacturing semiconductor devices

Abstract

Provided is a method of manufacturing a semiconductor device capable of suppressing a reduction in the deflecting strength of a chip and preventing cracking of a semiconductor chip in an assembling process, a reliability test, etc. The processes of forming semiconductor devices in a semiconductor wafer 21 and making dicing cuts in the semiconductor wafer along dicing lines 24 are implemented. Then, a laser beam 28 is irradiated on the dicing-processed regions 26 of the semiconductor wafer to fuse or evaporate the cut streaks formed by the dicing. Because the irradiation of a laser beam onto the upper edges and side surfaces of the semiconductor chips 25-1, 25-2, 25-3, etc.after the dicing process for dividing the semiconductor wafer causes fusion or evaporation of the cut sections entailing elimination of the strain and chipping originated from the cut streaks, it is enabled to enhance the deflecting strength of a semiconductor chip.

Description

technical field

[0001] The present invention relates to a semiconductor device manufacturing method and semiconductor device manufacturing equipment, in particular to a dicing process and a dicing machine for dividing a semiconductor wafer to form a semiconductor chip. Background technique

[0002] The dicing process in the manufacturing process of existing semiconductor devices, such as Figure 10 (a), (b), (c) as shown. That is, if Figure 10 As shown in (a) and (b), along one direction of the scribe line 12-1, 12-2, . Then, by turning the wafer 11 by 90°, such as Figure 10 As shown in (c), dicing is performed in a direction perpendicular to the dicing direction, and the semiconductor chips 14 - 1 , 14 - 2 , 14 - 3 , . . . are separated.

[0003] For the above-mentioned dicing process, generally, there are a full dicing method in which the wafer 11 is completely cut off, and a half dicing method in which dicing is performed until the thickness of the wafer 11 is about 1 / ...

Images