Polishing method and grinding fluid

A technology of lapping fluid and abrasive particles, which is applied in the directions of lapping devices, lapping machine tools, polishing compositions, etc., can solve the problems of difficulty in obtaining in-plane uniformity, difficulty in sufficiently suppressing scratches, and difficulty in suppressing dents, etc., and achieves less scratches. , The effect of suppressing dents and reducing scratches

Inactive Publication Date: 2004-09-29
EBARA CORP +1
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  • Summary
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Problems solved by technology

The purpose of this method is to fully improve the dispersibility of the fallen abrasive grains and increase the grinding speed by making the pH alkaline, but because the concentration of ammonium polyacrylate added is relatively high, it may cause aggregation, and it is difficult to fully suppress it. scratches
In addition, since the pH is alkaline, it is difficult to suppress dishing and obtain good in-plane uniformity

Method used

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  • Polishing method and grinding fluid
  • Polishing method and grinding fluid
  • Polishing method and grinding fluid

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Embodiment Construction

[0025] Hereinafter, embodiments of the polishing apparatus according to the present invention will be described in detail with reference to the drawings. figure 1 is a plan view showing the overall structure of a polishing apparatus according to one embodiment of the present invention.

[0026] Such as figure 1 As shown, the polishing apparatus in this embodiment includes four loading / unloading tables 2 for loading wafer cassettes 1 stacked with a plurality of semiconductor wafers. The loading / unloading table 2 can also have a mechanism that can be raised and lowered. In order to be able to reach each wafer cassette 1 on the loading / unloading station 2 , a transfer robot (transfer robot) 4 is arranged on the moving mechanism 3 .

[0027] The transfer robot 4 is equipped with two hands up and down. Of the two hands of the transfer robot 4 , the lower hand is a suction-type hand that vacuum-suctions wafers, and is used only to receive semiconductor wafers from the wafer cas...

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Abstract

The present invention relates to a polishing method and a polishing liquid for polishing a workpiece such as a semiconductor wafer with a fixed abrasive. In the polishing method for polishing a workpiece by pressing the workpiece to be polished against a fixed abrasive and bringing the workpiece in sliding contact with the fixed abrasive, the workpiece is polished while supplying a polishing liquid which contains an anionic surface-active agent and does not contain abrasive particles.

Description

technical field [0001] The present invention relates to a polishing method and a polishing liquid, in particular to a polishing method and a polishing liquid for polishing an object to be polished such as a semiconductor wafer with fixed abrasive grains. Background technique [0002] In recent years, with the progress of high integration of semiconductor devices, the wiring of circuits has been miniaturized, and the distance between wirings has also been narrowed. In particular, in the case of lithography with a line width of not more than 0.5 μm, since the depth of focus becomes shallow, the flatness of the imaging surface of a stepper is required. A polishing apparatus that performs chemical mechanical polishing (CMP) is known as a means for flattening the surface of such a semiconductor wafer. [0003] This chemical mechanical polishing (CMP) apparatus is equipped with a lapping table with a lapping pad on it and a top ring. In addition, the grinding object is installed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B7/22B24B37/04B24B49/12B24B53/007B24B53/02C09G1/00H01L21/304H01L21/3105
CPCB24B49/12B24B53/017B24B37/044B24B37/04B24B53/02H01L21/31053B24B7/228C09G1/00
Inventor 和田雄高赤朝彦佐佐木达也萩原敏也
Owner EBARA CORP
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