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Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

A technology of attenuating phase shift and mask, which is applied in the field of phase shift mask and can solve problems such as difficult common exposure

Inactive Publication Date: 2005-06-29
SYNOPSYS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, three-tone phase-shift masks exhibit strong photoproximity effects, making it difficult to apply this mask to a single co-exposure of insulating and focusing patterns

Method used

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  • Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
  • Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
  • Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

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Embodiment Construction

[0032] According to the present invention, an attenuation edge is a range defined by the attenuation phase shift area minus the opaque area, and it maintains a predetermined width on the positive three-tone attenuation phase shift mask, thereby correcting the optical proximity effect. Generally speaking, the made attenuation edge should be as large as possible in order to reduce the effect of the attenuation phase shift area, and at the same time, it can also avoid printing of a larger part of the attenuation phase shift area in the development process.

[0033] In order to be able to create the required attenuation edges, each edge related to the transition between the attenuation phase shift area and the clean area is divided into small segments, where each small segment includes at least one measurement point. E.g, image 3 It is illustrated that the structure 300 has six edges 301A-301F that define the transition between the attenuation, phase shift area 302 and the clean area...

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Abstract

Structures and methods suitable for correcting photoproximity effects in three-tone attenuated phase shift masks are provided. The attenuated edge is formed by opaque regions and attenuated phase shift regions, which can maintain a predetermined width throughout the mask and for certain types of structures. Typically, the attenuation edge is made as large as possible to maximize the effect of attenuating the phase shifting area while also avoiding printing of a larger portion of the attenuating phase shifting area during the development process.

Description

Technical field [0001] The present invention relates to a phase shift mask, and more particularly, to a structure and method for correcting the proximity effect in a three-tone attenuating phase shift mask. Background technique [0002] Photolithography is a well-known process in the semiconductor industry, which is used to make wires, contacts, and other known structures in integrated circuits (ICs). In conventional photoengraving technology, a mask (or scale sheet) is illuminated, and the mask (or scale sheet) has a pattern that represents the transparent and opaque areas of an IC layer structure. Subsequently, the light passing through the mask is focused on the photoresist layer on the wafer. In the subsequent development and washing process, part of the photoresist layer defined by the pattern is removed. In this way, the pattern of the mask is transferred or printed on the photoresist layer. [0003] However, the diffraction effect at the transition from the transparent are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F1/29G03F1/32G03F1/36H01L21/027
CPCG03F1/29G03F1/32G03F1/36
Inventor C·皮埃拉特Y·张
Owner SYNOPSYS INC