Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dehydration drying method and apparatus, and substrate processing apparatus

A technology of substrate processing device and drying method, which is applied in the direction of drying solid materials, drying chamber/container, and drying solid materials without heating, which can solve the problems of low-k film expansion, inability to achieve vacuum degree, deformation, etc.

Inactive Publication Date: 2005-07-13
EBARA CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem with such water molecules remaining in the low-k film is that the remaining water molecules make the low-k film swell and thus deform
In addition, when the subsequent processing of the substrate is performed under high vacuum or ultra-vacuum, the degree of vacuum required in the subsequent processing cannot be achieved due to water molecules remaining in the low-k thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dehydration drying method and apparatus, and substrate processing apparatus
  • Dehydration drying method and apparatus, and substrate processing apparatus
  • Dehydration drying method and apparatus, and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0045] Hereinafter, a dehydration drying method, a dehydration drying apparatus, and a substrate processing apparatus according to embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1A and 1B is a schematic cross-sectional view showing a dehydration drying apparatus for performing a method of dehydration and drying a substrate according to a first embodiment of the present invention. Such as Figure 1A and 1B As shown, a carrier 10 is used to accommodate and carry a substrate 15 between devices in a semiconductor fabrication facility. The carrier 10 includes a carrier body (body member) 11 having an opening defined in its side wall, and a cover 12 for sealingly closing the opening of the carrier body 11 . The cover 12 has a check valve 13 for allowing the inner space of the carrier body 11 to communicate with a vacuum source 14 . The carrier body 11 is capable of accommodating a plurality of substrates 15 at predetermi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The dehydration drying method dehydrates and dries the substrate. The substrate (15) is dehydrated and dried without rotation while the substrate (15) is housed in a carrier (10) for carrying the substrate (15) between devices for performing some processing.

Description

technical field [0001] The present invention relates to a dehydration drying method, a dehydration drying apparatus, and a substrate processing apparatus for dehydrating and drying substrates processed in wet processing used in semiconductor manufacturing processes and the like. Background technique [0002] So far, in semiconductor manufacturing, it has been used to spin-dry or N 2 Airflow treatment to dehydrate and dry substrates treated in wet treatment in which the substrate is rotated at high speed by a spin dryer to remove moisture attached to the surface of the substrate by centrifugal force. 2 Gas is blown onto the substrate to dry the substrate. [0003] In recent years, as the processing speed of semiconductor devices has become higher, so-called low-k thin films have been used as insulating films to be formed on substrates. Due to their production process, many of these low-k films have a porous structure as well as hydrophilic and water-absorbing properties. I...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B65D85/86F26B5/04F26B5/08F26B25/06H01L21/00H01L21/304H01L21/306H01L21/3105H01L21/316
CPCF26B5/04F26B25/063H01L21/02052H01L21/3105H01L21/67034H01L21/02203H01L21/304H01L21/31695
Inventor 阿藤浩司户川哲二
Owner EBARA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products