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Ion implant dose control

An ion implanter, ion beam technology, applied in semiconductor/solid state device manufacturing, discharge tubes, steam cooking utensils, etc., can solve problems such as disadvantages

Inactive Publication Date: 2005-09-14
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0021] A disadvantage of the method described in U.S. Patent No. 6,297,510 is that the pressure of the vacuum chamber needs to be measured in order to determine the pump down time constant τ
This requires an additional detector capable of measuring the pressure in the vacuum chamber and is also disadvantageous in terms of complexity and expense of the ion implanter

Method used

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  • Ion implant dose control
  • Ion implant dose control
  • Ion implant dose control

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Embodiment Construction

[0067] The present invention may be readily described with reference to such a single wafer implanter, such as ion implanter 20 shown in FIG. However, it should be understood that the present invention may also include batch implanters that simultaneously process large numbers of wafers mounted on rotating wheels.

[0068] The single wafer unit of FIG. 1 includes an ion source 22, such as a Freeman or Bernas ion source, which is supplied with precursor gases for generating an ion beam 23 to be implanted into a wafer 36. The ions produced in ion source 22 are extracted into flight tube (flght tube) 24 by an extraction electrode assembly, and this flight tube 24 includes a mass-analysis device (mass-analysis arrangement) 28, and mass-analysis device 28 includes a mass-analysis device again. Analysis magnets and a mass resolving slit are known in the art. When the charged ions enter the mass analysis device 28 in the flight tube 24, they will be deflected by the magnetic field o...

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PUM

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Abstract

This invention is concerned with the control of implanting ions into a substrate, such as doping semiconductor wafers. The ion beam is measured to ensure waters are implanted with the correct, uniform ion dose. The incident ion beam comprises ions and neutrals, yet detectors measure only ions. The ions / neutrals ratio varies with the ion implanter's chamber pressure that in turn is known to rise and fall when the ion beam is on and off the wafer respectively, according to a characteristic time constant. This invention provides methods of correcting measured ionic currents to account for neutrals using the time constant. Initially an assumed time constant is used that is later improved by measuring the ionic current after a delay sufficient to allow the chamber pressure to recover to its base value. The time constant may also be improved by removing any quadratic variation in already determined true beam current values.

Description

technical field [0001] The present invention relates to improvements in or related to dose control of ion implanted substrates, such as doping semiconductor wafers. Background technique [0002] Ion implanters are commonly used in the manufacture of semiconductor products for implanting ions into semiconductor substrates to alter the conductivity of materials in such substrates or in predefined regions thereof. An ion implanter generally includes an ion source that generates an ion beam, a mass analyzer that selects a specific type of ion from the ion beam, and directs the ion beam of the selected mass passing through the vacuum chamber to a target substrate supported on a substrate holder s installation. [0003] Most commonly, the cross-sectional area of ​​the ion beam on the target substrate is smaller than the surface area of ​​the substrate, necessitating beam scanning over the substrate using 1D or 2D scanning so that the ion beam covers the entire surface of the subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/304H01J37/317H01L21/265
CPCH01J37/3171H01J2237/30455H01J2237/30488H01J2237/31703H01J37/304A47G19/26A47J27/04
Inventor M·法利T·萨卡斯
Owner APPLIED MATERIALS INC