Soft-reference three conductor magnetic memory storage device

A technology of magnetic memory and storage device, which is applied in the field of soft reference layer magnetic random access memory, and can solve the problems of increasing buffer space and the like

Inactive Publication Date: 2005-09-28
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, as the size of magnetic memory decreases, the unused buffer space between individual memory cells tends to increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Soft-reference three conductor magnetic memory storage device
  • Soft-reference three conductor magnetic memory storage device
  • Soft-reference three conductor magnetic memory storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Before proceeding with the detailed description, it should be understood that this theory is presented by way of example and not limitation. The concepts herein are not limited to use or application with a particular type of magnetic memory. Thus, while the manner described herein is for ease of illustration, representation, and description with respect to the exemplary embodiments, it should be understood that the principles herein are equally applicable to other types of magnetic memories.

[0043] Referring now to the drawings, and more particularly to FIG. 2A , a portion of a soft-reference three-conductor magnetic memory 200 having at least one soft-reference spin-valve magnetic memory (SVM) cell 202 is shown. In at least one embodiment, the memory cell 202 is a soft reference SVM cell 202 having a conductive first read / write conductor 204 , a conductive second read conductor 206 , and a conductive third write column conductor 208 .

[0044] The soft reference SVM...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A soft-reference three conductor magnetic memory storage device is disclosed. In a particular embodiment, there are a plurality of parallel electrically conductive first sense / write conductors and a plurality of parallel electrically conductive second sense conductors. The first sense / write and second sense conductors may provide a cross point array. Soft-reference magnetic memory cells are provided in electrical contact with and located at each intersection. In addition there are a plurality of parallel electrically conductive third write column conductors substantially proximate to and electrically isolated from the second sense conductors. Sense magnetic fields orient the soft-reference layer but do not alter the data stored within the cell. An associated method of use is also provided.

Description

technical field [0001] The present invention relates generally to magnetic memory devices, and in particular to soft reference layer magnetic random access memory (commonly referred to as "MRAM") in a three-conductor architecture. Background technique [0002] Today's computer systems are becoming increasingly complex, allowing users to perform more and more types of computing tasks at increasing speeds. The size of memory and the speed at which it can be accessed has a major impact on the overall speed of a computer system. [0003] In general, the fundamental principle of data storage in magnetic media (main memory or mass storage) is the ability to change and / or invert the relative magnetization orientation (ie, logic state "0" or "1") of stored data bits. The coercivity of a material is the magnitude of the demagnetizing force that must be applied to the magnetic particles in order to reduce and / or reverse the magnetization of the particles. In general, the smaller the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15G11C11/16H01L21/8246H01L27/105H01L43/08
CPCG11C11/16
Inventor F·A·佩尔纳K·K·史密斯
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap