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PECVD deposition SiN film stripping technique

A thin film peeling and process technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of high dielectric strength, good acid and alkali corrosion resistance, difficult graphics processing, etc., and achieve good dielectric strength Effect

Inactive Publication Date: 2005-10-26
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
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Problems solved by technology

Because the SiN film produced has good compactness, high dielectric strength, and good acid and alkali corrosion resistance, it is difficult to process patterns by conventional photolith

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0009] (1) Use positive photoresist to spin-coated on the substrate with a thickness of 2 to 4 μm. Place it in a vacuum oven at 90°C for 5 to 20 minutes, take it out and place it under the mask, and expose it on the exposure table. The time is 15-60 seconds, placed in 0.6% NaOH or KOH solution for development, the time is 6-60 seconds, after the required pattern is displayed, take it out, rinse, and place it in an oven at 100-150℃ and bake for 10-30 minutes .

[0010] (2) Put the substrate with photoresist into the PECVD deposition chamber, when the vacuum degree reaches 3×10 -3 When Pa, charge NH 3 And SiH 4 , Or charge NH 3 And be N 2 SiH diluted to 12% 4 , NH 3 30sccm, SiH 4 / N 2 The temperature is 30sccm, the pressure is 2~5Pa, the temperature is increased to 80~120℃ at a rate of 10~20℃ / min, and the SiN film is deposited, the power is 200~300W, the deposition time is 20~45 minutes, and then 15~20℃ The speed of / min reduces the temperature to room temperature.

[0011] (3) Take...

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PUM

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Abstract

This invention relates to a technology for stripping SIN film by PECVD deposition including the following steps: 1, applying a positive photoresist to coat on a chip to be dried and taken out under a mask to be exposed on an exposing stand to be developed in an alkaline solution and taken out after developed, cleaned and dried, 2, putting the chip with photoresist in a PECVD deposition chamber to deposit SIN film, 3, taking out the chip and putting it in a ketone solution, after the photoresist breaks away from the chip, it is cleaned and dried.

Description

Technical field: [0001] The invention relates to a film stripping process. Background technique: [0002] The SiN film prepared by PECVD method has great difficulty in processing and making graphics. Because the produced SiN film has good compactness, high dielectric strength, and good acid and alkali corrosion resistance, it is difficult to process patterns by conventional photolithography and wet etching methods, and it is impossible to effectively remove SiN film materials other than patterns. So far, there is no effective method that can easily solve this difficult problem. Invention content: [0003] The purpose of the present invention is to overcome the above-mentioned defects existing in the prior art, and to provide a PECVD deposited SiN film stripping process that can avoid damage, erosion and destruction of SiN film and photoresist by dry etching. [0004] Processing step of the present invention is as follows: [0005] (1) Use positive photoresist to spin-co...

Claims

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Application Information

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IPC IPC(8): H01L21/32
Inventor 于映吴孙桃罗仲梓钟灿吴清鑫
Owner FUZHOU UNIVERSITY
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