PECVD deposition SiN film stripping technique

Abstract

This invention relates to a technology for stripping SIN film by PECVD deposition including the following steps: 1, applying a positive photoresist to coat on a chip to be dried and taken out under a mask to be exposed on an exposing stand to be developed in an alkaline solution and taken out after developed, cleaned and dried, 2, putting the chip with photoresist in a PECVD deposition chamber to deposit SIN film, 3, taking out the chip and putting it in a ketone solution, after the photoresist breaks away from the chip, it is cleaned and dried.

Description

Technical field:

[0001] The invention relates to a film stripping process. Background technique:

[0002] The SiN film prepared by PECVD method has great difficulty in processing and making graphics. Because the produced SiN film has good compactness, high dielectric strength, and good acid and alkali corrosion resistance, it is difficult to process patterns by conventional photolithography and wet etching methods, and it is impossible to effectively remove SiN film materials other than patterns. So far, there is no effective method that can easily solve this difficult problem. Invention content:

[0003] The purpose of the present invention is to overcome the above-mentioned defects existing in the prior art, and to provide a PECVD deposited SiN film stripping process that can avoid damage, erosion and destruction of SiN film and photoresist by dry etching.

[0004] Processing step of the present invention is as follows:

[0005] (1) Use positive photoresist to spin-co...