Electronic device and its manufacturing method

Abstract

The invention provides an electronic device for depressing leakage current increase of insulation films between wiring and membranous time variation, preventing the photosensitive resist poisoning. A first nitrogen-containing insulating film 103 is arranged under a low dielectric constant film 105 with a channel hole 108, a first nitrogen-non-containing insulating film 104 is clamped by the underside of the low dielectric constant film 105. A second nitrogen-containing insulating film 107 is arranged over the low dielectric constant film 105 where a second nitrogen-non-containing insulating film 107 is clamped.

Description

technical field [0001] The present invention relates to an electronic device and its manufacturing method, in particular to a wiring forming technique. Background technique [0002] In recent years, as integrated circuits have become more highly integrated, wiring intervals have been narrowed, and thus electric parasitic capacitance generated between wirings has increased. On the other hand, in an integrated circuit that requires high-speed operation, it is necessary to reduce the electric parasitic capacitance between wirings. [0003] Therefore, in order to reduce the electric parasitic capacitance between wirings, the method of reducing the dielectric constant of the insulating film between wirings is examined. The method of minimizing the electric parasitic capacitance between wirings is a method proposed by the present invention, which uses a film made of a material with a lower dielectric constant than a silicon oxide film, for example, as an insulating film between w...

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Problems solved by technology

[0004] However, for example, compared with conventional insulating films between wirings such as silicon oxide films, since the film density of low dielectric constant films such as carbon-containing silicon oxide films is very low, when the low dielectric constant films are exposed to air, Easily absorb nitrogen, etc. present in the air into the membrane

As a result, for example, on a carbon-containing silicon oxide film provided with a channel hole, when the photoetching process for forming the above-mentioned groove pattern for metal wiring is performed, the following problem occurs: that is, the coating near the channel hole The photoresist cannot be developed sufficiently, and as a result, the desired groove pattern cannot be formed because unnecessary photoresist remains.

[0017] However, in the above-mentioned conventional wiring structure, the countermeasure against the sticking effect of the photoresist film is to use a nitrogen-free silicon carbide film that is inferior in film quality to the silicon nitride carbide film instead of the silicon nitride carbide film, so there is leakage. The problem of high current

In addition, due to the poor film stability of the silicon carbide film, there is also a problem that the film quality often changes when the film is left after deposition.

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