Double-walled carbon nanotube, bulk structure of the same, method and apparatus for producing them

Abstract

Disclosed is an aligned double-walled carbon nanotube bulk structure which comprises multiple aligned double-walled carbon nanotubes and has a height of 0.1 [mu]m or more. In the bulk structure, the double-walled carbon nanotubes can be produced by chemical vapor deposition (CVD) in the presence of a metal catalyst having a controlled particle size and a controlled thickness, preferably in the presence of water. It becomes possible to provide a double-walled carbon nanotube which is free from the catalyst contamination, has a high purity, is easy to control the alignment or growth, can be formed through the formation of a bulk structure, and has an excellent electron-emitting property (particularly, a bulk structure of aligned, double-walled carbon nanotubes) and also provide a technique for production of the carbon nanotube.

Description

technical field [0001] The invention of the present application relates to double-layered carbon nanotubes and aligned double-layered carbon nanotube monolithic structures and their manufacturing methods. Tubes and monolithic structures of aligned double-walled carbon nanotubes and methods for producing them. Background technique [0002] Yield, quality, use, and mass production of carbon nanotubes (CNTs), which are expected for the development of functional materials such as new electronic device materials and electronic devices, optical device materials, conductive materials, and bio-related materials Efficiency and manufacturing methods are discussed in depth. [0003] In the presence of a metal catalyst and in the presence of water vapor in the reaction atmosphere, the inventors of the present invention produced a single-walled carbon nanotube with a high specific surface area and high purity, and a remarkably enlarged single-walled carbon nanotube and its monolithic as...

AI Technical Summary

Problems solved by technology

[0006] However, when using the original arc discharge method, there are problems with the mixing of catalyst metals, low yield, and non-directionality, especially the fundamental problem that it is difficult to precisely control through the adjustment of the catalyst; in the rotary annealing method, there are low yields. High rate, non-directional, big problem not suitable for mass production

In addition, when the original CCVD method is used, the yield is high, but there are problems that the catalyst is inevitably mixed, there is no orientation, and the control of the catalyst is difficult.

[0007] In addition, in the gas phase flow method, although the yield is high and the orientation control is possible, the mixing of the catalyst cannot be avoided, and there is a problem that the control is difficult.

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