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Column-decoding and precharging in a flash memory device

A column line and voltage source technology, applied in the field of memory arrays with virtual ground architecture, can solve problems such as the difficulty of mirror position architecture and the difficulty of estimating precharge voltage

Inactive Publication Date: 2006-05-03
SPANSION LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So, estimating the proper amount of pre-charge voltage is difficult, and even more difficult for mirror-position architectures

Method used

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  • Column-decoding and precharging in a flash memory device
  • Column-decoding and precharging in a flash memory device
  • Column-decoding and precharging in a flash memory device

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Embodiment Construction

[0032] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. In other instances, well-known methods, procedures, components, and circuits are not described in detail so as not to obscure the characteristics of the present invention.

[0033] Certain portions of the following detailed description represent procedures, steps, logical blocks, processing, and other symbols representing operations on data bits that can be performed in a computer memory. These descriptions and representations are the means used by those skilled in the art to most effectively convey their substantial findings to others skilled in the art. A program, computer-implemented steps, logical blocks, and process is considered herein to be a self-consistent sequence of steps or instructions leading to a desired result. The ste...

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Abstract

The present invention describes methods of reading memory cells, and memory arrays using these methods. A group of memory cells is arranged in a rectangular array with rows (X-dimension) and columns (Y-dimension). In a row, the sources and drains of the memory cells are coupled to form a linear chain. A common word line is coupled to each gate in the row. Each node between adjacent memory cells in the chain is coupled to a separate column line. Four column Y-decoders are used to select column lines for sensing operations. In a sensing operation, a voltage source is provided to two of the four columns. During precharging, an electrical load is provided to the first node in the memory array. A second node separated from the first node on the same word line by at least one intervening node is precharged.

Description

field of invention [0001] The present invention generally relates to a memory cell array, and more particularly, the present invention relates to a virtual ground memory array. Background technique [0002] The architecture of general memory arrays is known in the art. Typically, a memory array contains multiple row and column lines. Rows in an array are often called word lines and columns are called bit lines, but the terms are relative. [0003] The overlapping part of the word line and the bit line is called a node (node). On or near each node is a memory cell, usually a transistor of some type. In a virtual ground architecture, one bit line can be used as a source or drain line for a transistor (memory cell) depending on whether the memory cell is program-verified or read. For simplicity of description, "read" may refer to a read operation or a program verify operation. [0004] Flash memory devices use memory cell transistors of a floating gate structure. Data in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C7/12G11C16/04
CPCG11C7/12G11C16/0491G11C16/26
Inventor 杨天钧谢明辉K·栗原陈伯苓K·王M·S·钟
Owner SPANSION LLC