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Micro contact-element and making method

A manufacturing method and micro-contact technology, which can be used in contact manufacturing, contact components, semiconductor/solid-state device manufacturing, etc., and can solve problems such as bending of silicon substrates, increased failure rate, and poor process qualification rate.

Inactive Publication Date: 2006-08-09
MPI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this process must first form a sacrificial layer on the silicon substrate, and the sacrificial layer is made of silicon dioxide (S102). This material is easy to cause the silicon substrate to bend due to the problem of film stress, and its degree of curvature is as follows: In severe cases, it will approach the thickness dimension of the probe, and the error of the thickness dimension of the probe will be too large, resulting in an increase in the failure rate
In addition, when the probe is grinding the flatness of its surface, it is supported by the masking layer, but the material (softer) of the masking layer is not conducive to being used as a support, so that the probe will Poor grinding uniformity due to insufficient support of the shielding layer, the probe is easy to fall off during the grinding process, resulting in poor process pass rate
Moreover, the manufacturing process of this probe cannot produce a tip structure that can break through the surface oxide layer of the object to be tested such as solder balls, thereby reducing the contact resistance and achieving better electrical connection.

Method used

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Embodiment Construction

[0024] In order to enable a further understanding and recognition of the features and objectives of the present invention, the following preferred embodiments are enumerated and described below with accompanying drawings.

[0025] Please refer to Fig. 1 (A) to Fig. 1 (H), which is a manufacturing method of a micro-contact element provided by the first preferred embodiment of the present invention, wherein the micro-contact element manufactured by the following manufacturing method is an example of a probe , whose steps include:

[0026] a) As shown in FIG. 1(A): Laying and forming a conductive film 12 on a substrate 11 with a non-conductive surface.

[0027] Wherein, the material of the substrate 11 can be a semiconductor material, a metal plate coated with a non-conductive material, a polymer material, a ceramic material, a composite material, etc., such as a silicon substrate. The conductive film 12 can be a metal with good adhesion, such as titanium metal; the conductive f...

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Abstract

The method includes steps: forming a conductive film on a surface of not electroconductive base plate; forming masking layer with a patternized opening on the conductive film; depositing a conductive material into the opening on the masking layer; removing masking layer; removing the conductive film to make micro contact element made from conducting material separate from base plate.

Description

technical field [0001] The present invention is related to a contact element, and more specifically refers to a micro-contact element and a manufacturing method thereof. Background technique [0002] When testing high-density or high-speed electrical devices (such as LSI or VLSI circuits), it is necessary to use a probe card (Probe Card) with a large number of micro-contact elements (probes), so that the micro-contact elements can be used as a flexible And can provide electrical connection conductor characteristics, as an element that is electrically connected to the object under test, such as a test contact element for LSI and VLSI chips, semiconductor wafers, chip burn-in, packaged semiconductor devices, and printed circuit boards for. Of course, the micro-contact element can also be used as the IC lead of the IC package. For the convenience of subsequent description, the micro-contact elements are mainly described as the probes of the probe card. [0003] Commonly used...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01R43/16H01L21/283H01L21/441G01R3/00G01R1/06H01R13/02
Inventor 陈志忠
Owner MPI CORP
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