59results about How to "Reduce capacitive effect" patented technology

The invention relates to a method for generating an optical output, said method comprising the steps of: providing first and second electrical signals; providing a bipolar light emitting transistor device comprising a collector region, a base region and an emitter region; providing a collector electrode coupled to the collector region and an emitter electrode coupled to the emitter region, and potential coupled with respect to the collector electrode and the emitter electrode; providing an optical coupling in optical communication with the base region ; providing first and second base electrodes coupled to the base region; and coupling the first and second electrical signals to the first and second base electrodes, respectively, to generate The region emits and couples into the optical coupling an optical output that is a function of the first and second electrical signals. The present invention also discloses an improved pnp transistor laser and a technique for switching back and forth between a stimulated emission mode and a spontaneous emission mode for generating output laser pulses.

The invention discloses a mesa PIN passivation structure. The mesa PIN passivation structure is provided with P-type, I-type and N-type semiconductor layers which form a step layer mesa, wherein the I-type semiconductor layer is an InGaAs absorption layer; and a Fe-doped semi-insulating InGaAs layer grows on a side wall of the InGaAs absorption layer. The invention further discloses a high-speed mesa InGaAs photodiode and a preparation method thereof. The problem of electric leakage of an existing mesa PIN side surface passivation structure can be solved, and the chip performance is improved;and moreover, the process is simple, and the rate of finished products is high.

The invention provides a schottky diode controlled by a junction barrier having a superposed P<+>-P structure. The schottky diode comprises an N<+> type substrate zone (100), an N type drift region (101), P<+> portions of the superposed P<+>-P structure (102), an anodic electrode (104), a cathodic electrode (105), a silicon dioxide layer (106), a schottky contact (107), and an ohmic contact (108). Besides, the schottky diode also includes P portions of the superposed P<+>-P structure (103), wherein the P<+> window portions of the superposed P<+>-P structure (102) is on the P window portions of the superposed P<+>-P structure (103). According to the invention, before the P<+> portions of the superposed P<+>-P structure in an area are formed, the P portions of the superposed P<+>-P structure in an area are formed, wherein the P portions are separated from each other and the structure of P portions is similar to the netted structure of a junction barrier schottky (JBS). Therefore, reverse withstand voltage of the JBS diode device can be improved and the output capacitance can be reduced, on the condition that the forward conduction characteristic of the device is not sacrificed. The process of the invention has the strong feasibility of implementation, and the application requirement of the power electronic system can be satisfied easily according to the invention.

The invention provides an inverted metal detection probe, the probe is a gantry-shaped detection frame; the lower channel of the gantry-shaped detection frame is a detection channel; a detection module is arranged in the gantry-shaped detection frame; the detection module includes a protection shell, main control module, drive circuit, transmitting coil, receiving coil and receiving circuit; the receiving coils are an even number, and each receiving coil has the same specifications and is located above the detection channel; each of the receiving coils is parallel to the detection channel; The transmitting coil is located above and parallel to each receiving coil; each receiving coil takes the center point of the layout position of the transmitting coil as a symmetrical point, and is symmetrically arranged above the detection channel; the invention improves the structure of the built-in coil of the probe, so that the probe can be very Conveniently compatible with conveyor equipment at the installation site.

The embodiment of the invention discloses a positron emission computer tomography detector device. The device comprises a silicon semiconductor detection array, wherein the silicon semiconductor detection array comprises a plurality of silicon semiconductor detection units; the cathodes of the plurality of silicon semiconductor detection units are connected with a power supply; the anodes or the cathodes of the plurality of silicon semiconductor detection units are taken as first signal output ends which are connected with corresponding time detection circuits; the number of the time detectioncircuits is more than 1 and is smaller than or equal to the number of the first signal output ends, by reducing the number of the silicon semiconductor detection units connected to the same time detection circuit, the capacitance effect of the silicon semiconductor detection units for collecting pulse signals is weakened, thus the attenuation degree of the high-frequency part in the pulse signalsis reduced, and the detection accuracy for gamma photon receiving time is improved.

The invention relates to an electrolysis method and device for a self-cleaning carbon electrode, and belongs to the technical field of electrochemistry electrolysis. A periodic swerving electrolysis device is adopted and comprises an electrolytic cell, a periodic swerving controller and a direct-current power supply system, wherein the positive electrode and the negative electrode of the electrolytic cell are carbon electrodes, and the periodic swerving controller can be used for realizing the circular operations of electrifying, switching off, carrying out swerving electrification and switching off. The electrolysis method comprises the following steps of: 1) introducing materials into the electrolytic cell, wherein the electric conductivity of electrolysis material is more than 0.1S/m; 2) regulating the periodic swerving controller; and 3) electrifying to carry out electrolytic oxidation and reduction reaction. According to the method and the device disclosed by the invention, the carbon electrode can be cleaned by self in the electrolytic oxidation and reduction process, concentration polarization is lowered, the electrolysis efficiency is improved, the electrolysis energy consumption is lowered, and industrial implementation is easily carried out.

The invention provides an electrothermal film assembly and a manufacturing method thereof. The electrothermal film assembly comprises a first insulating layer, a conductive heat-generating material layer arranged on the upper surface of the first insulating layer, a second insulating layer at least covering the upper surface of the conductive heat-generating material layer, a thermal-radiation reflecting layer arranged at the lower surface of the first insulating layer, a thermal-radiation extracting layer arranged at the upper surface of the second insulating layer, and a thermal-radiation enhancing layer arranged at the upper surface of the thermal-radiation extracting layer. The electrothermal film assembly has the high thermal-radiation efficiency and thermal extraction efficiency; andthe loss of electric energy is reduced effectively. According to the electrothermal film assembly, the outer side of the electrothermal film assembly is packaged plastically by the insulating layers,so that the electrothermal film assembly has the stable electric heating function, the good insulating performance and high safety. Meanwhile, since the thermal-radiation reflecting layer and the thermal-radiation extracting layer in the electrothermal film assembly can be connected with the ground wire of the power source, the capacitance effect formed by the electrothermal film assembly and theoutside can be eliminated and thus the good safe and electric leakage prevention effects are realized.

The invention relates to a method and a device for electrolysis of a self-cleaning composite graphite electrode, and belongs to the technical field of electrochemical electrolysis. The device is a periodic turning electrolyzer comprising an electrolysis bath, a periodic turning controller and a direct current supply system, wherein the positive electrode and the negative electrode are made of insoluble metal; a graphite or glass carbon complex pole is arranged in the middle; and the periodic turning controller realizes the circulating operations of power turn-on, power turn-off, turning power turn-on and power turn-off. The electrolysis method comprises the following steps: (1) materials are fed into the electrolysis bath, wherein the electric conductivity for the electrolyzed materials is larger than 0.1 S/m; (2) the periodic turning controller is adjusted; and (3) power is turned on to carry out electrolytic oxidation reduction reaction. The method and the device can realize self-cleaning of the electrode in the electrolytic oxidation reduction process, improve the electrolysis efficiency and reduce the electrolysis energy consumption and are easy for industrial implementation.

The invention discloses a storage unit and a manufacture method. The storage member comprises a substrate, a plurality of lamination structures, a plurality of conducting columns, a plurality of charge storage layers and a plurality of third conductor layers; the lamination layer structures are arranged on the base; the lamination layer structures are arranged along a first direction and extended along a second direction, wherein each lamination structure comprises a plurality of conducting layers and a plurality of dielectric layers which are alternatively laminated along a third direction; each conducting column is arranged on the base between the two adjacent lamination structures; each charge storage layer is positioned between the lamination layer structure and the conducting column; each third conducting layer is extended along the first direction, is intersected with the lamination structures in multiple intersection areas and covers part of the lamination structures and the tops of the conducting columns; and each intersection area of the lamination structure and the third conducting layer has an air gap and the air gap is extended along a third direction.

The present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region. The second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region. The second reflector region and the first reflector are configured to induce stimulated recombination in the auxiliary active region.

The invention relates to a flat-panel display of a double-sided sunken inner cathode grid-controlled structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel; and grid lead layer, carbon nanotube and double-sided sunken inner cathode grid-controlled cathode structure on the cathode glass panel; and it can reduce operating voltage of grid and improve display brightness and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

The invention provides a fan-out type packaging structure and a fan-out type packaging method, and relates to the technical field of semiconductors. The structure comprises a packaging element, a plastic packaging body, a first dielectric layer and a second dielectric layer, the packaging element is provided with a first bonding pad and a second bonding pad, the first bonding pad is lower than the second bonding pad, the plastic packaging body packages the packaging element in a plastic mode, the end face of the first bonding pad is exposed out of the surface of the plastic packaging body, and the end face of the second bonding pad is exposed out of the surface of the plastic packaging body. A first wiring layer is arranged on one side, far away from the packaging element, of the first bonding pad, and a first welding ball is arranged on the first wiring layer; the first dielectric layer is arranged on the side, away from the packaging element, of the first wiring layer, the end face of the second bonding pad is exposed out of the surface of the first dielectric layer, a second wiring layer is arranged on the side, away from the packaging element, of the second bonding pad, and second welding balls are arranged on the second wiring layer; a second dielectric layer is arranged on the side, away from the first wiring layer, of the second wiring layer. The structure can reduce the number of wiring layers and does not need to additionally increase conductive columns.

A high-speed transmission line includes a first shielded layer, a first insulating layer, a conductor layer, a second insulating layer and a second shielded layer sequentially attached to each other. The conductor layer includes plural first conductors and plural first conductors interspersed with each other, and the first conductor has a round cross section and is made of a round copper wire capable of increasing the signal transmission speed and extending the scope of application of the transmission line of a flexible cable.

A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first signal transmission conductor, a first power transmission conductor, an inspection signal transmission conductor, a second signal transmission conductor, a command reset transmission conductor, a first grounding transmission conductor, a second power transmission conductor, a first differential transmission conductor, a second differential transmission conductor, a third signal transmission conductor, a second grounding transmission conductor, a third grounding transmission conductor, a third differential transmission conductor, a fourth differential transmission conductor, a fourth grounding transmission conductor, a fifth grounding transmission conductor, a fifth differential transmission conductor, a sixth differential transmission conductor, and an outside grounding transmission conductor, each of which has a spring section and a soldering section. The soldering sections, being so arranged, achieve advantages of bettering high frequency performance, reducing capacitive effect, and suppressing electromagnetic radiation interference.

The invention relates to a method and a device for electrolytic oxidation reduction for a self-cleaning composite graphite electrode and belongs to the technical field of electrochemical electrolysis. The device is a periodic turning electrolyzer comprising an electrolysis bath, a periodic turning controller and a direct current supply system, wherein the positive electrode and the negative electrode are made of insoluble metal; a graphite complex pole is arranged in the middle; and the periodic turning controller realizes the circulating operations of power turn-on, power turn-off, turning power turn-on and power turn-off. The electrolysis method comprises the following steps: (1) materials are fed into the electrolysis bath, wherein the electric conductivity for the electrolyzed materials is larger than 0.1 S/m, and the pH value is adjusted to be 6 to 12; (2) the periodic turning controller is adjusted; and (3) power is turned on to carry out electrolytic oxidation reduction reaction, wherein the electric current density is 5 to 80 A/m<2>. The method and the device can realize self-cleaning of the electrode in the electrolytic oxidation reduction process, improve the electrolysis efficiency and reduce the electrolysis energy consumption and are easy for industrial implementation.

The invention is suitable for the technical field of solar cells, and provides a power test method for an N-type cell module. The power test method of the N-type battery assembly comprises the following steps: placing the N-type battery assembly in an experiment box provided with a steady-state light source; the N-type battery assembly is tested, and the test power and the test backboard temperature of the N-type battery assembly are obtained; and determining the target power of the N-type battery assembly according to the test power and the test backboard temperature. Therefore, the target power of the N-type battery assembly can be efficiently and accurately obtained, and the method is simple, convenient, easy to operate and low in cost.