7results about How to "Reduce capacitive effect" patented technology

According to the SGT MOSFET of the Low-k material and the preparation method of the SGT MOSFET, a gate insulating layer of the SGT MOSFET is deposited by adopting the Low-k material based on carbon-doped silicon oxide, and an oxide layer on the side wall of a shielding gate adopts an ONO structure, so that on one hand, the capacitance effect of a device can be reduced through the Low-k material under the condition that the physical thickness of the insulating layer is kept unchanged and electric leakage is not influenced, and the performance of the device is improved; the performance of the device is improved; and on the other hand, the compactness of the silicon nitride layer is high, and the side wall and the bottom of the shield gate polycrystalline silicon are protected by the silicon nitride layer, so that the on resistance of the device is further reduced and the conduction loss of the device is reduced by improving the doping concentration of the epitaxial layer on the basis of not reducing the breakdown voltage. Meanwhile, by controlling the depth of the oxide layer and the silicon nitride layer which are etched on the side wall of the groove, the silicon nitride layer is far away from the grid polycrystalline silicon, and the reliability of the device is improved.

The application discloses a bipolar square wave excitation generation and conductivity detection circuit, a direct current bias square wave generation circuit can generate direct current bias square wave excitation signals with different frequencies; a direct current bias generation circuit generates a direct current voltage excitation; the direct current bias of the direct current bias square wave is equivalent to the size of the direct current voltage, and two signals are superposed to form a bipolar square wave excitation signal. An internal reference voltage output by an ADC is used as a voltage source of the direct current bias square wave generation circuit and the direct current bias voltage generation circuit; a node voltage of an ADC acquisition circuit is collected, so that the conductivity and temperature of a medium to be measured are obtained. The excitation and detection mode provided by the application ensures that all circuit voltages are positive voltages, simplifies the structure of the excitation and sampling circuit, is high in measurement accuracy, stable in measurement, low in power consumption and capable of meeting long-term online monitoring requirements.

The invention discloses a transimpedance amplifier and a deep sea heavy metal detection device. The transimpedance amplifier comprises a working electrode for generating input current, an integrator, a buffer, a feedback capacitor and a feedback resistor, the feedback capacitor is connected between the output end and the input end of the integrator; the feedback resistor is connected between the output end of the buffer and the input end of the integrator; the input end of the integrator is connected with the working electrode, and the integrator is used for amplifying input current and outputting first amplified voltage to the buffer; the buffer is used for amplifying the received first amplified voltage and outputting a second amplified voltage. The transimpedance amplifier provided by the invention is integrated with the on-chip electrode, so that the distance between the transimpedance amplifier and an electrochemical reaction tank can be shortened to hundreds of microns, the capacitance effect of electrochemical reaction is reduced, the noise level can be reduced, and quantitative detection of the concentration of trace heavy metals in deep sea is realized.

The utility model provides a silicon carbide VDMOS with a source electrode shielding structure. The silicon carbide VDMOS is characterized in that the lower side surface of a drift layer is connected to the upper side surface of a silicon carbide substrate; a groove is formed in the drift layer; the insulating dielectric layer is arranged on the groove, a source electrode shielding layer is arranged in the insulating dielectric layer, a groove is formed in the insulating dielectric layer, and the groove is located above the source electrode shielding layer; the lower side surface of the well region is connected to the upper side surface of the drift layer, a source region is arranged in the well region, one side surface of the source region and one side surface of the well region are connected to one side surface of the insulating dielectric layer, and the upper side surface of the source shielding layer is higher than the lower side surface of the well region; the source electrode metal layer is connected to the well region and the source region, and the source electrode metal layer is electrically connected to the source electrode shielding layer; the gate metal layer is arranged in the groove; the drain metal layer is connected to the lower side surface of the silicon carbide substrate; the source shielding layer reduces the capacitance effect from the gate metal layer to the drift layer, so that the gate-drain Miller capacitance is effectively reduced, the gate charge of the device is reduced, the switching speed of the device is improved, and the driving loss of the device is reduced.

This utility model relates to the field of terminal block technology and discloses a split terminal block structure, including a main body. An auxiliary component for reducing terminal capacitance effects is provided on the outside of the main body. The auxiliary component includes a cover plate on the top of the main body. Multiple mounting grooves are provided on the inner wall of the main body, and terminal strips are provided inside each of the mounting grooves. One end of the terminal strip has a mechanism end and a signal end. Guide grooves are provided at both ends of the inner wall of the main body, and fixing pieces are provided on the inner walls of both guide grooves. A shielding shell is provided on the top of the main body, with plugs at the bottom of both ends of the shielding shell and locking holes at both ends. Positioning holes are provided at both ends of the top of the main body, and buckles are provided on both sides of the main body. This utility model, by designing the terminals as a split, double-layered stepped structure, forms two independent terminals, which can reduce capacitance effects and improve the quality of high-frequency signal transmission. Furthermore, by adding a shielding shell, the signal terminals are protected from interference, which is beneficial for high-frequency enhancement.

The utility model discloses a chip lead frame structure and a chip lead frame unit, the chip lead frame structure comprises a frame main body, two opposite sides of the frame main body are provided with outer pin interfaces, the frame main body is provided with a concave base island, and the surface of the frame main body is plated with a silver layer; the chip lead frame structure comprises a pressing plate and a chip lead frame structure body, a plurality of packaging grooves are evenly distributed in the pressing plate, and the chip lead frame structure body is arranged in the packaging grooves.

The present application relates to a kind of brushless external electrostatic discharge ring electrostatic powder rotary cup spray gun device, including electrostatic powder spray gun body, non-metallic insulating rotary distributor assembly, electrostatic discharge ring, drive unit for driving rotary distributor assembly rotation, and for providing high-voltage static for electrostatic discharge ring high-voltage static generation unit.First, cancel the metal part design of rotary distributor assembly, substantially reduce the capacitance effect of metal part in rotary distributor assembly itself, eliminate the phenomenon of striking fire generated in the spraying process of traditional metal rotary distributor assembly, improve safety.Both can prevent carbon brush from mixing carbon residue into powder during rotation and friction process to pollute powder, and can also reduce the cost of frequent replacement and maintenance of carbon brush, so as to reduce the use cost of spray gun.