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Semiconductor wafer with a silicon-germanium layer and process for its manufacture

A semiconductor and wafer technology, applied in the field of manufacturing the semiconductor wafer, can solve the problems of adverse effects on electronic characteristics of electronic components and high dislocation density

Inactive Publication Date: 2006-08-23
SILTRONIC AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dislocation density is too high, which adversely affects the electronic properties of the electronic components fabricated on the substrate

Method used

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  • Semiconductor wafer with a silicon-germanium layer and process for its manufacture
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  • Semiconductor wafer with a silicon-germanium layer and process for its manufacture

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Experimental program
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Embodiment

[0030] Put the cleaned single crystal oriented silicon wafer into a CVD reactor with decompression capability. at 1.3 x 10 -5 Pascal pressure and temperature of 1050°C, flushing with hydrogen gas to remove residual oxygen and residual carbon left on the surface of the silicon wafer. First, dichlorosilane (SiH 2 Cl 2 ) to deposit a 50 nm thick monocrystalline silicon layer. Hydrogen was used as the carrier gas. Immediately thereafter epitaxial deposition was started to deposit the graded layer. For this purpose, germanium tetrahydrogen (GeH 4 ). At the beginning of depositing the graded layer, the germanium tetrahydrogen flow was strong (flow gradient increased by 8 sccm every 30 seconds) and became weaker as the process continued (flow gradient increased by 1 sccm every 30 seconds at the end of deposition) became weaker. In each case, the dichlorosilane flow was reduced by the same amount. The proportion of germanium is 20% in a layer thickness of 1.5 μm (d / 2). At t...

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PUM

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Abstract

A semiconductor wafer has a monocrystalline silicon layer and a graded silicon-germanium layer adjacent thereto, of thickness d and composition Si1-xGex, where x represents the proportion of germanium and 00.5.x(d). The wafer may be further processed, in which process a layer of the semiconductor wafer is transferred to a substrate wafer.

Description

technical field [0001] The invention relates to a semiconductor wafer comprising a monocrystalline silicon layer and adjacent thereto a silicon-germanium layer in which the proportion of germanium increases towards the surface. The invention also relates to a method of manufacturing said semiconductor wafer. The invention also relates to the further processing of said semiconductor wafers, wherein the layers of said semiconductor wafers are transferred to a base wafer, and the semiconductor wafers produced thereby. Background technique [0002] In the known method of fabricating a relaxed silicon-germanium layer, silicon and silicon-germanium are first realized by depositing a silicon-germanium layer with a gradually increasing germanium content (hereinafter referred to as "graded silicon-germanium layer" (graded silicon-germanium)). Lattice matching between germanium. The change curve of germanium concentration described in the prior art is "linear" ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/161H01L33/00H01L21/20
CPCH01L21/0251H01L21/0245C30B25/02C30B29/52H01L21/02381B60Q1/38B60Q1/323B60Y2200/11
Inventor 迪尔克·丹兹安德烈亚斯·胡贝尔赖因霍尔德·沃利希
Owner SILTRONIC AG