Chemical vapor deposition method

A technology of chemical vapor deposition and equipment, which is applied in the direction of gaseous chemical plating, electrical components, coatings, etc., and can solve problems such as uneven plasma and thin film deposition
CN1847450AInactive Publication Date: 2006-10-18WONIK IPS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
WONIK IPS CO LTD
Publication Date
2006-10-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
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Description

[0001] This application is a divisional application of an invention patent application with the application number 02107463.1, the filing date being March 19, 2002, and the invention title being "Chemical Vapor Deposition Equipment". technical field

[0002] The present invention relates to a chemical vapor deposition (CVD) apparatus. In particular, the present invention relates to a chemical vapor deposition apparatus that uses radicals of reaction gases while sequentially supplying process gases by generating plasma within a showerhead or ejecting external plasma into a chamber using the showerhead. Background technique

[0003] Generally, source gas and reaction gas are sequentially supplied into a chemical vapor deposition apparatus in order to obtain excellent layered coating and film quality characteristics at low temperature. Here, will refer to Figure 1A to Figure 1C A brief description will be given of a conventional chemical vapor deposition apparatus capable of s...

Claims

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