Device and method for chemical vapour deposition (CVD)
A technology of chemical vapor deposition and supporting devices, applied in gaseous chemical plating, electrical components, coatings, etc.
Active Publication Date: 2006-10-18
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 5 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0008] In order to solve the above-mentioned problems, the present invention aims to provide a chemical vapor deposition apparatus and method for improving the structure of the gas distribution panel, so that even if the distance between the gas distribution panel and the wafer is shortened in consideration of process efficiency, A uniform thin film can be formed on the entire surface of the wafer
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. figure 2 is a longitudinal sectional view showing a schematic structure of a chemical vapor deposition apparatus according to the present invention.
[0029] like figure 2 As shown, the chemical vapor deposition apparatus according to the present invention is composed of an upper body 11 and a lower body 12, and includes: a process chamber 10 forming a sealed space for depositing a film on a wafer W; arranged through the lower body 12 and can be used The wafer supporting device 20 formed by rotating the wafer W, so that the process gas sprayed to the side of the wafer W is deposited on the surface of the wafer W; the shower head 50 arranged through the upper body 11, and the shower head 50 includes a plurality of gas jets for forming the injection process gas Gas distribution faceplate 40 of flow path 30 . The wafer support d...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention provides a chemical vapor deposition apparatus and method thereof for improving the structure of a gas distribution panel for uniformly spraying engineering gas supplied to a wafer. To this end, the present invention includes a showerhead for distributing process gases to wafers within a process chamber, the showerhead comprising a gas distribution panel forming a plurality of gas injection flow paths, at least one of which comprises a gas distribution panel The first flow path where the engineering gas starts to flow and the second flow path formed by inclining at a certain angle with respect to the direction of the first flow path in order to change the flow direction of the engineering gas passing through the first flow path. At this time, in order to make the engineering gas pass through the second flow path and be diffused to a wider area, the second flow path may form a channel shape. According to this structure, even if the distance between the gas distribution panel and the wafer is shortened in order to improve the process efficiency, the present invention can uniformly deposit the engineering gas on the entire surface of the wafer, thus having the effect of being able to manufacture high-quality wafers.
Description
technical field [0001] The present invention relates to a chemical vapor deposition device and method used in a semiconductor manufacturing process, in particular to a chemical vapor deposition device and method with improved gas distribution panel structure for uniform injection of engineering gas supplied to wafers. Background technique [0002] Chemical vapor deposition (CVD), as one of the semiconductor process technologies, refers to the method of forming a single crystal semiconductor film or insulating film on the surface of a wafer by chemical reaction. A conventional thermal CVD process forms a predetermined thin film by supplying a reactive gas to a wafer surface and utilizing a heat conduction chemical reaction generated on the wafer surface. The plasma-enhanced CVD (PE CVD) technology forms plasma by applying high-frequency energy to the reaction area around the substrate surface, and the high reactivity of these plasmas reduces the energy...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C23C16/14
CPCH01L21/67207C23C16/45565H01L21/0262
Inventor 厄斯哈科夫·安德瑞任洵圭朴休林韩宰贤朴英敏
Owner SAMSUNG ELECTRONICS CO LTD