Unlock instant, AI-driven research and patent intelligence for your innovation.

Image sensor having pinned floating diffusion diode

A technology of pixel sensor and floating diffusion area, which is applied in the direction of diodes, image communication, semiconductor devices, etc.

Inactive Publication Date: 2006-12-06
APTINA IMAGING CORP
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The saturation point of region 16 limits the dynamic range of the pixel and the ability of the image sensor to capture intra-scene intensity variations under certain lighting conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor having pinned floating diffusion diode
  • Image sensor having pinned floating diffusion diode
  • Image sensor having pinned floating diffusion diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and which illustrate by way of example specific embodiments in which the invention may be practiced. These embodiments have been described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that structural, logical, and other modifications may be made without departing from the spirit and scope of the invention. and electrical changes. The progression of process steps described is an exemplary embodiment of the invention; however, the order of the steps is not limited to that set forth herein and may be varied as known in the art, except for steps that must occur in a certain order.

[0028] The terms "wafer" and "substrate," as used herein, are understood to include silicon, silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.

Description

technical field [0001] The present invention generally relates to methods and apparatus relating to imager pixel arrays. In particular, the invention relates to imagers having pixels with improved floating diffusion regions. Background technique [0002] Typically, a digital imager array includes a focal plane array of pixel cells, each of which cells includes a photoelectric conversion device, such as a grating, photoconductor, or photodiode. In one such imager, known as a CMOS imager, a readout circuit is connected to each pixel cell, which typically includes a source follower output transistor. A photoelectric conversion device converts photons into electrons, which are typically transferred to a charge storage region, which may be a floating diffusion region, connected to the gate of a source follower output transistor. A charge transfer device, such as a transistor, may be included for transferring charge from the photoelectric conversion device to the floating diffus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146
CPCH01L27/14609H01L27/1463H01L27/14643H01L27/14689H04N5/35527H04N25/575H04N25/59H01L27/146
Inventor 洪性权
Owner APTINA IMAGING CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com