Check patentability & draft patents in minutes with Patsnap Eureka AI!

Demonstration system for phase-change memory cell array and visual demonstration method therefor

A phase-change memory and cell array technology, applied in the field of micro-nano electronics, can solve problems such as the inability to realize intuitive visualization operations

Active Publication Date: 2013-08-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the realization and visual characterization of phase change memory storage performance are also key steps in the research process. At present, the only standard for judging the state of a device unit is to measure its resistance value, which cannot achieve intuitive visual operation. Therefore, a set of devices that can complete The operating system for the selective storage operation of the unit, the operation of the stored data, and the visual display of the data state, that is, the demonstration system of the device unit array
However, since phase change memory is still in the research and development stage, there is no relevant standard demonstration system at home and abroad. Therefore, the present invention proposes a set of storage demonstration system for phase change memory device cell arrays.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Demonstration system for phase-change memory cell array and visual demonstration method therefor
  • Demonstration system for phase-change memory cell array and visual demonstration method therefor
  • Demonstration system for phase-change memory cell array and visual demonstration method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Figure 6 It is a schematic diagram of the readout circuit, switching circuit, and address selection circuit in the first column of a demonstration system with a phase-change memory device cell array of 8×8, and the other seven columns have the same principle. Among them, Q9 is an analog device ADG706BRU. Its function is that when the EN terminal is at a high level, the D port will select one of the S[16-1] according to the input signal of the port A[3-0]. Its function is equivalent to 4 -16 multiplexer. It is used as an address selection circuit here, where EN is connected to the column selection signal such as SAMPLECIL0, A[2-0] is connected to the row selection signal of this column such as SAMPLEROW[2-0], and S[8-1] is connected to the eighth of a certain column. A storage unit such as SAMPLE[70-00], D is connected to the output terminal of the sample such as SAMPLEOUT0, and the other seven columns are also connected in the same relationship.

[0027] Among them, ...

Embodiment 2

[0030] Figure 7 is the pair in the Phase Change Memory Device Cell Array Demonstration System Figure 6 The switching circuit, the address selection circuit, the control circuit controlled by the readout circuit and the interface circuit connected with the programmable logic device are shown. Among them, J1 is the interface circuit connected with the programmable device and U1, U2, and U2 is a flip-flop of model 74HC574, and its function is to input D when the clock input CLK is a rising edge when the enable terminal OC is not active at low level. [8-1] are all sent to the output terminal of Q[8-1], where the enable terminal is grounded, the clock input is connected to the column selection enable signal CS_COL of J1, and Q[8-1] is connected to Figure 6 The column selection signal SAMPLECOL[0-7], D[8-1] are connected to the data signal MCU-AD[0-7] of J1 connected by the programmable device. U1 is a buffer with a model of 74HC245. Its function is to output the data signal fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The related member array demo system for a phase-change memory comprises: a control computer; a SCM as the system core; a pulse signal generator; a control circuit board with circuits for addressing, switch, reading, and display; an array chip of a phase-change memory; and a conversion and connection member. Wherein, the computer communicates with the SCM by self RS232 interface for receiving andsending the command and data; the SCM controls peripheral circuits. The opposite demo method comprises data access, reading and calculation.

Description

technical field [0001] The invention relates to a phase-change memory device unit array demonstration system and a visual demonstration method, belonging to the technical field of micro-nano electronics. Background technique [0002] Phase-change memory technology is based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968). Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material undergoes reversible phase transition between amorphous state and polycrystalline state. By distinguishing the high resistance in the amorphous state and the polycrystalline state The low resistance can...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G09B9/00
Inventor 宋志棠刘波梁爽陈小刚封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More