Unlock instant, AI-driven research and patent intelligence for your innovation.

Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure

一种陶瓷、低温的技术，应用在陶瓷层状产品、化学仪器和方法、多层电路制造等方向，能够解决提高材料、设备和加工成本、底部导体不能共加工等问题

Inactive Publication Date: 2007-01-03
EI DU PONT DE NEMOURS & CO
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] However, due to the need to introduce the peeling layer (201) and remove it after firing, the cost of materials, equipment and processing is increased.
Also, the bottom conductor in contact with the lift-off layer cannot be co-processed with the laminate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure
  • Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure
  • Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

Glass density 4.45g / cc

Alumina density 4.02g / cc

[0087] The content of the above filler and glass represents the solid formulation of the primary belt and the restraint belt. Use these materials

[0088] Experiment #1

Elementary#1 / Restriction#1 / Elementary#1 / Restriction#2 / Elementary#1

Layer ratio = 3 / 1 / 6 / 1 / 3

Restriction band thickness = 4.0 mils

Primary tape thickness = 4.5 mils

Total / Constrained Belt Thickness Ratio=7.8

Test #2

Elementary#1 / Restriction#1 / Elementary#1 / Restriction#2 / Elementary#1

Layer ratio = 2 / 1 / 4 / 1 / 2

The thickness of the restraint band = 4.0 mils

Primary tape thickness = 4.5 mils

Total / Constrained Belt Thickness Ratio=5.5

Trial #3

Elementary#1 / Restriction#1 / Elementary#1 / Restriction#2 / Elementary#1

Layer ratio=3 / 1 / 4 / 1 / 3

Restriction band thickness = 4.0 mils

Primary tape thickness = 4.5 mils

Total / Constrained Belt Thickness Ratio=6.6

Trial #4

...

Embodiment 2

[0093] The primary #2 tape (4.5 mils thick) was paired with two different restraint tape compositions (restraint #1 and restraint #2), which have the same total / restraint tape thickness ratio, as in Example 1 Shown.

[0094] Glass:

Filler: Al 2 O 3 (D50=2.8 microns)

Filler content 33.9% by volume

SiO 2

54.50

Weight%

Na 2 O

2.20

Al 2 O 3

12.72

Li 2 O

0.24

B 2 O 3

8.32

SrO

2.94

CaO

16.63

K 2 O

1.47

MgO

0.98

Glass density 2.55g / cc

Alumina density 4.02g / cc

Trial #5

Elementary#2 / Restriction#1 / Junior#2 / Restriction#2 / Junior#2

Layer ratio = 3 / 1 / 6 / 1 / 3

Restriction band thickness = 4.0 mils

Primary tape thickness = 4.5 mils

Total / Constrained Belt Thickness Ratio=7.8

Test #6

Elementary#2 / Restriction#1 / Junior#2 / Restriction#2 / Junior#2

Layer ratio = 2 / 1 / 4 / 2 / 1

The...

Embodiment 3

[0098] This embodiment uses restraint belts #2 and 3 and primary belt #2. Regarding the dielectric constant k value, the confinement band #2 is higher than the primary band #2, and the dielectric constant of the primary band #2 and the confinement band #3 are similar.

[0099] Glass:

[0100] In the belt furnace, after firing at 850°C, all samples are relatively flat, showing the following x, y shrinkage %: test #10 is 0.42%, test #11 is 0.22%, test #12 is 0.33%, test #13 is 0.09%. Comparing the above 13 experiments, it is obvious that the combination of primary belt #2 and restraint belts #1 and #2 provides the most effective x, y shrinkage control.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
boiling pointaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.

Description

Technical field [0001] The present invention relates to a flat, non-warping, zero-shrinkage low-temperature co-fired ceramic (LTCC) body, composite, module or component, which consists of three or more different configurations arranged in a unique or pseudo-symmetrical z-axis of the laminate The precursor green (unfired) laminate with the chemical properties of the dielectric tape is obtained. Background technique [0002] An interconnected circuit board or package is the physical realization of an electronic circuit or subsystem of a large number of electrically and mechanically connected very small circuit elements. It is often necessary to combine these different types of electronic components in an arrangement so that they can be physically separated, installed adjacent to each other in a single compact component, and electrically connected to each other and / or to a common extending from the component connect. [0003] Composite electronic circuits usually require the circuit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B32B18/00C03C3/097C04B37/04H05K1/03H05K3/46
CPCH01L23/49894H01L23/15H01L21/481H01L2924/09701H05K3/4688B32B18/00C03C14/004H05K1/162C04B2235/6025H01L2924/0002C04B2237/564C04B2235/6565C04B2237/341C04B2235/6562H05K3/4629H05K1/0306C03C2214/04H01L21/4857C03C2214/30Y10T428/24926H01L2924/00C04B35/622H05K3/46
Inventor C·B·王K·W·汉C·R·尼芝
Owner EI DU PONT DE NEMOURS & CO