Method for testing GaN single-crystal fault kind and density

A technology of defect types and detection methods, which is applied in the directions of measuring devices, semiconductor/solid-state device testing/measurement, and material analysis through optical means, and can solve the requirements of electrical conductivity, long selection and scanning time, limited needle tip effect, etc. problem, to achieve the effect of wide applicability
CN1896727AInactive Publication Date: 2007-01-17XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2007-01-17
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a detection method of the GaN single-crystal defective kinds and the density which is to improve the traditional wet corrosion detection technology to match the GaN material. The invention detects the surface of the sample by amplifying the SEM magnification times and reducing the AFM detection section step by step. Also it uses the AFM deep section topography and skips over the corrosion condition. It ensures the solid shape of the corrosion pit by compounding the SEM and the AFM to determine the corresponding relation of the corrosion pit and the flaw type by compounding the physical model of the corrosion mechanism. It computes the density and the distributing of all kinds of the flaws by reading the SEM picture. The invention is simple and proper for detecting the industry production.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor material quality detection, in particular to a detection method for the type and density of GaN single crystal defects, which can be used to determine the type of line defects within 100nm below the surface of a c-plane GaN single crystal thin film grown by heterogeneous epitaxy vs density, suitable for etch pit density EPD at 10 7 ~10 8 / cm 2 Various doped or undoped GaN single crystal materials with good conductivity. Background technique

[0002] At present, the most convenient and effective method for the quality inspection of semiconductor single wafers is wet etching, which has been widely used in Si and GaAs materials. There are three keys to this technology: 1. Find the corresponding relationship between corrosion pits and defects to determine the type of defects; 2. Find the optimal corrosion conditions to reveal as many defects as possible; 3. Perform microscopic observation acc...

Claims

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