Magnetic random access storage based on closed magnetic multilayer film and control method

A technology of random access memory and control method, which is applied in static memory, digital memory information, information storage, etc., and can solve problems such as difficulties in reading and writing methods

Active Publication Date: 2007-01-24
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the influence of the demagnetization field and shape anisotropy of the non-closed structure memory unit when the existing magnetic random access memory uses the magnetic multilayer film of the non-closed structure as the storage unit, and the high-density state There are magnetic coupling and mutual interference betw

Method used

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  • Magnetic random access storage based on closed magnetic multilayer film and control method
  • Magnetic random access storage based on closed magnetic multilayer film and control method
  • Magnetic random access storage based on closed magnetic multilayer film and control method

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Embodiment 1

[0058] Such as Figure 1A , 1B As shown, the magnetic random access memory storage unit array is composed of a large number of MRAM units. In one MRAM unit, it includes a closed rectangular ring-shaped magnetic multilayer film storage unit RML (5), transistor TR (0), transition Metal layer TM (4b), contact holes (3a, 3b) and a set of wiring, namely bit line BL1 (4c), word line WL1 (2) and ground line GND (4a).

[0059] The structure of the magnetic multilayer film in this closed rectangular annular magnetic multilayer film storage unit RML (5) is SiO in 1mm thick 2 The lower buffer conductive layer Au with a thickness of 2nm, the hard magnetic layer (HFM) Co with a thickness of 3nm, the intermediate layer (I1) Cu with a thickness of 1nm, and the soft magnetic layer (SFM) with a thickness of 1nm are deposited sequentially on the Si substrate. ) NiFe and a covering layer Ru with a thickness of 4nm and a conductive layer Au with a thickness of 2nm. The preparation of the closed ...

Embodiment 2

[0065] Such as Figure 2A , 2B As shown, the magnetic random access memory storage unit array is composed of a large number of MRAM units. In one MRAM unit, it includes a closed rectangular annular magnetic multilayer film storage unit RML (5), arranged in a closed rectangular annular magnetic The metal core MC (6), transistor TR (0), transition metal layer TM (4b), contact holes (3a, 3b) and a group of wiring in the geometric center of the multilayer film memory cell RML (5), that is, the bit line BL1 ( 4c), bit line BL2 (4d), word line WL1 (2), and ground line GND (4a). The closed rectangular ring-shaped magnetic multilayer film storage unit RML (5) and the transistor TR (0) are connected to each other through the transition metal layer TM (4b) and the contact hole (3b). In the layout, the bit line BL2 (4d) is arranged above the closed rectangular annular magnetic multilayer film storage unit RML (5) and is directly connected to the closed rectangular annular magnetic mult...

Embodiment 3

[0070] Such as Figure 3A , 3B As shown, the magnetic random access memory storage unit array is composed of a large number of MRAM units. In one MRAM unit, it includes a closed rectangular annular magnetic multilayer film storage unit RML (5), arranged in a closed rectangular annular magnetic Metal core MC (6), transistor TR (0), transition metal layer TM (4b, 4b1, 4b2), contact holes (3a, 3b, 3b1, 3b2) and A set of wires, namely bit line BL1 (4c), word line WL1 (2), word line WL2 (7) and ground line GND (4a). The closed rectangular ring-shaped magnetic multilayer film storage unit RML (5) and the transistor TR (0) are connected to each other through the transition metal layer TM (4b) and the contact hole (3b). In the layout, the bit line BL1 (4c) is arranged above the closed rectangular annular magnetic multilayer film memory unit RML (5) and is directly connected to the closed rectangular annular magnetic multilayer film memory unit RML (5).

[0071] The structure of the...

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Abstract

The present invention relates to a kind of magnetic random access memory (MRAM) based on closed ring multilayer magnetic film, and the MRAM adopts closed ring multilayer magnetic film with or without metal core as the memory unit. The MRAM realizes the write/read operation by means of changing the magnitude and direction of current flowing through the memory unit; or realizes write-in operation via applying current to the metal core and realizes the read-out operation via applying tunneling current to the ring multilayer magnetic film in the memory unit. Compared with available technology, the MRAM of the present invention has the advantages of simple control, simple structure, simple manufacture, low cost and raised application value.

Description

technical field [0001] The invention relates to a magnetic random access memory (MRAM) based on a closed magnetic multilayer film, and a control method thereof Background technique [0002] Since Baibich et al first observed the giant magnetoresistance (Giant Magneto Resistance, GMR) effect in the magnetic multilayer film system in the late 1980s, the research on the magnetic multilayer film system has been a topic of general concern to researchers. Because the GMR effect has a high magnetoresistance ratio, it can be widely used in magnetoresistance sensors, magnetic recording and reading heads, and other fields. Devices made of GMR not only have excellent characteristics such as high sensitivity, small size, and low power consumption, but can also bring many new features such as radiation resistance and non-volatile information storage. In particular, the application of the GMR effect to magnetic recording and reading heads has brought a profound revolution to the entire f...

Claims

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Application Information

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IPC IPC(8): G11C11/15G11C7/00
Inventor 韩秀峰马明姜丽仙韩宇男覃启航魏红祥
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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