Unlock instant, AI-driven research and patent intelligence for your innovation.

Variable capacitor structure and its producing method

A technology of variable capacitance and gate structure, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems that cannot fully meet the needs of use, and the Q value of MOS variable capacitance is low.

Inactive Publication Date: 2007-01-24
UNITED MICROELECTRONICS CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And the Q value of the MOS variable capacitor is low, so although it has a large tuning ratio, it still cannot fully meet the needs of use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Variable capacitor structure and its producing method
  • Variable capacitor structure and its producing method
  • Variable capacitor structure and its producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] See Figure 1 to Figure 3 , Figure 1 to Figure 3 An embodiment of a variable capacitance structure 30 fabricated according to the method of the present invention is shown. First please refer to figure 1 , figure 1 A semiconductor substrate 10 for fabricating the variable capacitance structure 30 of the present invention is shown. The semiconductor substrate 10 includes a plurality of isolation structures 12, an N-type deep ion well 14, and a P-type ion well 16, wherein the isolation structure 12 can be a shallow trench isolation (STI). However, according to the method of the present invention, the semiconductor substrate 10 can also have other structures. For example, the semiconductor substrate 10 can be an N-type substrate. Well 14, and a P-type ion well 16 can be directly formed thereon. Ion doping can be performed after the isolation structure 12 is formed to form the ion wells 14 and 16 , and the isolation structure 12 can also be formed on the surface of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a variable condenser structure with high quality factors and better linearity and a manufacturing method, which carries out one more time of ionic injection after forming a grating structure as the first electrode of the variable condenser structure and before the ionic injection of a second electrode to form a highly doped region, namely, said variable condenser structure has a highly doped region in the same conducting type with the second electrode between the second electrode and the substrate.

Description

technical field [0001] The invention relates to a variable capacitance structure and a manufacturing method thereof, in particular to a variable capacitance structure with high quality factor and better linearity and a manufacturing method thereof. Background technique [0002] In the modern information industry, all kinds of data, data, information, images, etc. are transmitted in the form of electronic signals, and the processing circuits used to process electronic signals have become the most important foundation of the modern information industry. The oscillator (oscillator) in the circuit is one of the indispensable and important circuit building blocks in the modern digital system. For example, in a general information system (such as a personal computer), a global clock is required to coordinate the operation of various digital circuits in the digital system, and the clock is generated by an oscillator. In addition, to coordinate the synchronization of different cloc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L29/78
Inventor 高境鸿
Owner UNITED MICROELECTRONICS CORP