Methods of forming metal-insulator-metal (mim) capacitors with passivation layers on dielectric layers and devices so formed

Abstract

The inventin discloses methods of forming a dielectric layer of a MIM capacitor which can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

Description

technical field [0001] The present invention relates to methods of forming structures in integrated circuits, and more particularly, to methods of forming structures in integrated circuits using dual damascene processes. Background technique [0002] As the density of integrated circuits increases, there is a need to reduce the size of associated capacitors, eg, in dynamic random access memories (DRAM). However, it is also necessary to increase the capacitance per unit area of ​​such capacitors, which makes it difficult to reduce the overall size of capacitors used in high-density integrated circuits. A type of capacitor has been developed to solve the above-mentioned problems in Metal-Insulator-Metal (MIM) type capacitors. [0003] Figure 1-3 is a cross-sectional view illustrating a conventional method of manufacturing a MIM capacitor. Particularly, figure 1 A chip region (C) and a scribe region (S) of an integrated circuit substrate are shown. according to figure 1...

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Problems solved by technology

However, it is also necessary to increase the capacitance per unit area of ​​such capacitors, which makes it difficult to reduce the overall size of capacitors used in high-density integrated circuits

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