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Stacked storage capacitor structure, ltps TFT-lcd

A capacitor structure, thin film transistor technology, applied in transistors, instruments, circuits, etc., can solve the problems of image retention, flicker, light interference, etc., and achieve the effects of increasing storage capacity, simplifying processes, and reducing costs

Inactive Publication Date: 2007-06-13
TPO DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, problems such as flickering, image sticking, and light interference (cross-talk) are prone to occur

Method used

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  • Stacked storage capacitor structure, ltps TFT-lcd
  • Stacked storage capacitor structure, ltps TFT-lcd
  • Stacked storage capacitor structure, ltps TFT-lcd

Examples

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no. 1 example

[0028] 2A is a top view of a pixel of a low-temperature polysilicon thin film transistor liquid crystal display according to the first preferred embodiment of the present invention, and a stacked storage capacitor structure is formed in the pixel. 2E is a sectional view taken along the section line B-B' of the pixel shown in FIG. 2A; FIGS. 2B to 2E are process sectional views illustrating the stacked storage capacitor structure. FIG. 2F is an equivalent circuit diagram illustrating the pixel shown in FIG. 2A .

[0029] As shown in FIG. 2A , a pixel 20 has a stacked storage capacitor structure, a thin film transistor 24 , and a pixel electrode 240 formed above. Wherein, the above-mentioned stacked storage capacitor structure includes a first storage capacitor (C st ) 22 and the second storage capacitor (C st’ )29. A signal line 26 and a gate line 28 intersect near the thin film transistor 24 and are arranged around the pixel 20 . The above-mentioned second storage capacitor...

no. 2 example

[0037] 3A is a top view of a pixel of a low-temperature polysilicon thin film transistor liquid crystal display according to a second preferred embodiment of the present invention, and a stacked storage capacitor structure is formed in the pixel. 3G is a cross-sectional view taken along the section line C-C' of the pixel shown in FIG. 3A; FIGS. 3B to 3G are cross-sectional views illustrating the process of the stacked storage capacitor structure.

[0038] As shown in FIG. 3A , a pixel 30 has a stacked storage capacitor structure, a thin film transistor 34 , and a pixel electrode 340 formed above. Wherein, the above-mentioned stacked storage capacitor structure includes a first storage capacitor (C st ) 32 and the second storage capacitor (C st’ )39. A signal line 36 and a gate line 38 intersect near the thin film transistor 34 and are arranged around the pixel 30 . The above-mentioned second storage capacitor (C st’ ) 39 is placed in the above-mentioned first storage capac...

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Abstract

The invention discloses a stacked storage capacitor structure for a LTPS TFT-LCD comprising a processed substrate, a first storage capacitor and a second storage capacitor. The first storage capacitor comprises a first conductive layer, a second conductive layer and a first insulating layer therebetween. The stacked storage capacitor structure further comprises a third conductive layer including a first portion and an extended second portion. The second storage capacitor comprises the second conductive layer, the extended second portion of the third conductive layer and a second insulating layer therebetween.

Description

technical field [0001] The invention relates to a low-temperature polysilicon thin film transistor liquid crystal display, and in particular to a stacked storage capacitor structure and a forming method thereof. Background technique [0002] FIG. 1A is a top view illustrating a pixel of a conventional low-temperature polysilicon thin film transistor liquid crystal display, and a storage capacitor is formed in the pixel. FIG. 1B is a cross-sectional view taken along the section line A-A' of the pixel shown in FIG. 1A. FIG. 1C is an equivalent circuit diagram illustrating the pixel shown in FIG. 1A . [0003] As shown in FIG. 1A , a pixel 10 has a storage capacitor 12 , a thin film transistor 14 , and a pixel electrode 140 formed above. Wherein, a signal line 16 and a gate line 18 intersect near the thin film transistor 14 and are arranged around the pixel 10 . The pixel electrode 140 and the storage capacitor 12 are in electrical contact with the thin film transistor 14 th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/136H01L29/786H01L21/00
CPCG02F1/136213G02F2201/18
Inventor 李牧家黄俊伟吕宏哲郭国鸿李鸿斌赖文贵蔡佳怡张育淇李浩群张炜炽
Owner TPO DISPLAY