Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage

A magnetic storage and device technology, applied in the field of magnetic materials and magnetic storage media, can solve the problems of magnetic storage information heat and magnetic stability decline

Active Publication Date: 2007-07-11
RGT UNIV OF CALIFORNIA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reduction in the size of the magnetic bit may lead to a decrease

Method used

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  • Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage
  • Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage
  • Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage

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Embodiment Construction

[0026] The magnetic materials, memory technologies and memory devices described in this application use two magnetically coupled magnetic layers, a ferromagnetic (F or FM) layer and an adjacent antiferromagnetic (AF or AFM) layer, to Provide stable binary magnetic storage media and multi-state magnetic storage media. The stable binary magnetic storage media described herein are resistant to magnetic disturbances due to a variety of factors including stray magnetic fields from read / write heads, adjacent magnetic bits, and other sources, and thus can be used to implement Highly dense magnetic bits on the medium. The multi-state magnetic storage media described herein provide multiple remanence values ​​to represent multiple states in each magnetic bit, thereby increasing the amount of information stored in each bit.

[0027] Figure 1 shows one embodiment of a magnetic medium with coupled ferromagnetic and antiferromagnetic layers. As shown, in MgF 2 AF layer (such as FeF 2) ...

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Abstract

Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device.

Description

[0001] This application claims priority to U.S. Provisional Patent Application Serial No. 60 / 587,789, filed July 13, 2004, entitled "Magnetic Proximity Effect-Based Magnetic Storage Media," the contents of which are hereby incorporated by reference as part of the specification for this application. [0002] Statement Regarding Government Funding [0003] This invention was made as part of Government Support Program Nos. FA9550-04-1-0160 and DE-FG03-87ER-45332. Certain rights in this invention are vested in the Government. Background technique [0004] This application relates to magnetic materials and magnetic storage media. [0005] Magnetic materials can be used for data storage. Examples of storage devices made of various magnetic materials include magnetic cards, magnetic tape, magnetic disks, and hard disk drives. In most commercially available magnetic recording media, each recorded bit has two logic states of "0" and "1", which are respectively represented by two d...

Claims

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Application Information

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IPC IPC(8): B32B9/00G11B5/02G11B5/66
CPCG11B5/66G11B9/14B82Y10/00G11B2005/0021G11B11/10528G11B2005/0002G11C11/16G11B5/02G11B11/10584G11B11/10586G11C11/5607G11B11/10504G11C7/04G11C11/161G11C11/1675B32B9/00G11B9/02
Inventor 伊戈尔·V·罗辛奥列格·彼得克拉斐尔·莫拉莱斯李志攀泽维尔·巴特勒伊万·K·舒勒
Owner RGT UNIV OF CALIFORNIA
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