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Membrane for EUV lithography

a technology of euv lithography and membrane, which is applied in the direction of microlithography exposure apparatus, instruments, photomechanical treatment, etc., can solve the problems of manufacturing defects on the substra

Active Publication Date: 2022-05-03
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contamination on the surface of the patterning device can cause manufacturing defects on the substrate.

Method used

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  • Membrane for EUV lithography
  • Membrane for EUV lithography
  • Membrane for EUV lithography

Examples

Experimental program
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Embodiment Construction

[0019]FIG. 1 schematically depicts a lithographic apparatus 100 including a source collector module SO according to one embodiment of the invention. The apparatus 100 comprises:[0020]an illumination system (or illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation).[0021]a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device;[0022]a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate; and[0023]a projection system (e.g., a reflective projection system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0024]The illumination system IL may include v...

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Abstract

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is the U.S. national phase entry of PCT patent application no. PCT / EP2016 / 079594, which was filed on Dec. 2, 2016, which claims the benefit of priority of European patent application no. 15199845.7, which was filed on Dec. 14, 2015, and European patent application no. 16163962.0, which was filed on Apr. 6, 2016, each of which is incorporated herein in its entirety by reference.FIELD[0002]The present invention relates to a membrane, a patterning device assembly and a dynamic gas lock assembly for EUV lithography.BACKGROUND[0003]A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individu...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G03F1/24G03F1/62G03F7/20
CPCG03F1/24G03F1/62G03F7/2008G03F7/70916G03F7/70983
Inventor VAN ZWOL, PIETER-JANDE GRAAF, DENNISJANSSEN, PAULPÉTER, MÁRIAVAN DE KERKHOF, MARCUS ADRIANUSVAN DER ZANDE, WILLEM JOANVLES, DAVID FERDINANDVOORTHUIJZEN, WILLEM-PIETER
Owner ASML NETHERLANDS BV