Photoelectric converter and fabrication method thereof
a technology of photoelectric converter and fabrication method, which is applied in the direction of material analysis, instruments, radio frequency control devices, etc., can solve the problems of accidental control, inability to increase electric energy (electrical signal) uniformly, and out of dead spaces
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first embodiment
[0068] First Embodiment
[0069] A first embodiment pertains to a laminated type image sensor in which a lower electrode 104 of a photoelectric conversion device 102 comprising the lower electrode 104, a photoelectric conversion layer 106 and an upper electrode 105 has bends as shown in FIG. 1 and to a fabrication method thereof.
[0070] Light may be collected and confined uniformly by creating the bends on the lower electrode 104.
[0071] FIG. 1 is a section view of one pixel of photoelectric converter of the present embodiment. In the photoelectric converter of the present embodiment, there is provided a top gate type MOS transistor 101 having a semiconductor layer having a source region 120, a channel region 121 and a drain region 122 as well as a gate insulating film 123 and a gate electrode 124. A polyimide film 103 is provided on the MOS transistor 101.
[0072] A size 113 of one pixel is set at 10 .mu.m.times.10 .mu.m in the present embodiment. However, the size of the pixel is not lim...
second embodiment
[0090] Second Embodiment
[0091] A second embodiment pertains to a photoelectric converter in which a plurality of micro lenses are created above the image sensor of the first embodiment and to a fabrication method thereof.
[0092] The conversion efficiency may be enhanced by providing the plurality of micro lenses above the photoelectric conversion device of one pixel.
[0093] FIG. 4 is a section view of one pixel of the image sensor of the present embodiment. Three micro lenses 401 made of acrylic resin are provided above the photoelectric conversion device 102 of the image sensor of the first embodiment in the section view of FIG. 4. That is, nine micro lenses of 3.times.3 are provided on one pixel.
[0094] FIGS. 5 and 7 show steps for fabricating the image sensor of the present embodiment. At first, a flattening film 501 made of acrylic resin and having a thickness of 5 to 10 .mu.m is formed on the ITO 105 which is the upper electrode of the photoelectric conversion layer of the image s...
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