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Photoelectric converter and fabrication method thereof

a technology of photoelectric converter and fabrication method, which is applied in the direction of material analysis, instruments, radio frequency control devices, etc., can solve the problems of accidental control, inability to increase electric energy (electrical signal) uniformly, and out of dead spaces

Inactive Publication Date: 2001-10-18
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration enhances sensitivity uniformly across pixels by effectively confining and converting optical signals into electric charges, reducing noise and maintaining high image quality even with miniaturized pixel sizes.

Problems solved by technology

However, because the scattering of light caused by the texture structure is probabilistic irregular reflection, it cannot be controlled intentionally and it is unable to increase electric energy (electrical signal) uniformly.
Because the photoelectric conversion devices and the signal transfer devices are disposed on one and same plane of the same device substrate in the image sensor, regions of the signal transfer devices of the image sensor turn out to be dead spaces where no photoelectric conversion can be made.
Then, because electric signals converted by the photoelectric conversion device of the image sensor decrease, i.e., electric charges are generated less, the relative rate of noise generated by the electrical effects in and out of the apparatus to the quantity of generated electric charges increases, thus dropping the sensitivity.
As described above, there arises a problem that the sensitivity of the image sensor drops when the size of one pixel of the image sensor is reduced in order to obtain the small and high image quality image sensor.
The problem of the drop of the sensitivity of the image sensor which occurs when the size of the pixel is reduced cannot be solved fully just by providing the prior art micro lens or by laminating the photoelectric conversion device with the signal transfer device.
However, when the photoelectric conversion device having the electrode in the texture structure is used for the image sensor, scattered light cannot be controlled and the sensitivity disperses among the respective pixels.

Method used

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  • Photoelectric converter and fabrication method thereof
  • Photoelectric converter and fabrication method thereof
  • Photoelectric converter and fabrication method thereof

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first embodiment

[0068] First Embodiment

[0069] A first embodiment pertains to a laminated type image sensor in which a lower electrode 104 of a photoelectric conversion device 102 comprising the lower electrode 104, a photoelectric conversion layer 106 and an upper electrode 105 has bends as shown in FIG. 1 and to a fabrication method thereof.

[0070] Light may be collected and confined uniformly by creating the bends on the lower electrode 104.

[0071] FIG. 1 is a section view of one pixel of photoelectric converter of the present embodiment. In the photoelectric converter of the present embodiment, there is provided a top gate type MOS transistor 101 having a semiconductor layer having a source region 120, a channel region 121 and a drain region 122 as well as a gate insulating film 123 and a gate electrode 124. A polyimide film 103 is provided on the MOS transistor 101.

[0072] A size 113 of one pixel is set at 10 .mu.m.times.10 .mu.m in the present embodiment. However, the size of the pixel is not lim...

second embodiment

[0090] Second Embodiment

[0091] A second embodiment pertains to a photoelectric converter in which a plurality of micro lenses are created above the image sensor of the first embodiment and to a fabrication method thereof.

[0092] The conversion efficiency may be enhanced by providing the plurality of micro lenses above the photoelectric conversion device of one pixel.

[0093] FIG. 4 is a section view of one pixel of the image sensor of the present embodiment. Three micro lenses 401 made of acrylic resin are provided above the photoelectric conversion device 102 of the image sensor of the first embodiment in the section view of FIG. 4. That is, nine micro lenses of 3.times.3 are provided on one pixel.

[0094] FIGS. 5 and 7 show steps for fabricating the image sensor of the present embodiment. At first, a flattening film 501 made of acrylic resin and having a thickness of 5 to 10 .mu.m is formed on the ITO 105 which is the upper electrode of the photoelectric conversion layer of the image s...

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Abstract

There is provided a laminated type photoelectric converter whose sensitivity is enhanced uniformly. In the photoelectric converter in which a photoelectric conversion device is laminated above a signal transfer device, the sensitivity is enhanced by providing bends on a lower electrode of the photoelectric conversion device and by confining light uniformly.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a photoelectric converter in which a photoelectric conversion device is laminated above a signal transfer device and more particularly to improving the sensitivity of such photoelectric converter.[0003] 2. Description of Related Art[0004] A photoelectric converter is an apparatus having photoelectric conversion devices. A photoelectric conversion device is a device for converting light energy into electric energy or electric energy into light energy. Among the photoelectric conversion devices, the device for converting light energy (optical signal) into electric energy (electrical signal) includes a photovoltaic device (solar battery) aiming at generating energy and a photo-receiving device for processing signals. The photo-receiving device includes a photo-diode and a photo-transist or utilizing the photovoltaic effect and a photoconductive cell utilizing the photo-conductive effect.[0005] With the advancement ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L27/146H01L31/0232
CPCH01L27/14603H01L27/14627H01L27/14632H01L27/14643H01L27/14665H01L31/0232Y10S438/948H01L31/02327
Inventor ZHANG, HONGYONGSAKAKURA, MASAYUKI
Owner SEMICON ENERGY LAB CO LTD