System and method for producing a reduced substrate micro-electro-mechanical systems (MEMS) device
a micro-electromechanical and reduced substrate technology, applied in the field of micro-electromechanical systems (mems), can solve the problems of rf energy loss, high-resistance silicon is significantly more expensive than conventional silicon, and the overall energy loss of the filter is los
Inactive Publication Date: 2005-05-12
INTEL CORP
View PDF12 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The present invention relates to a method for producing a reduced substrate MEMS device, which can reduce energy loss and improve the performance of certain MEMS devices, such as FBAR RF filters. The invention involves using a reduced substrate, which can be more expensive than standard silicon, but can still be used to produce the device. The invention also involves using a support substrate, which can be a thin membrane or a layer of silicon, to support the device. By using a reduced substrate, the invention can minimize energy loss and reduce materials costs. The invention can be applied to various MEMS devices, such as FBAR RF filters, RF switches, and tunable capacitors. Overall, the invention provides a way to produce a high-quality MEMS device with improved performance and reduced energy loss.
Problems solved by technology
In such devices, RF energy may be lost due to undesired parasitic capacitance between metal conductors of the FBAR RF filter and its silicon substrate during operation of the filter.
The undesired parasitic capacitance, which may be caused by the relatively high conductivity of both the metal and the silicon, is often a significant contributor to the overall energy loss of the filter.
However, high-resistance silicon is significantly more expensive than conventional silicon.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0010] Although the present invention is not limited in this regard, the term “MEMS device” as used herein may be understood to include, inter alia, any suitable Micro-Electro-Mechanical Systems device, for example, a Film Bulk Acoustic Resonator (FBAR) filter, a FBAR Radio Frequency (RF) filter, a RF switch, a varactor, a tunable capacitor, or any other MEMS device where it may be relevant to apply the principles of the present invention. Although an exemplary embodiment of the present invention may include a low-loss FBAR RF filter, it is presented herein only as an example of applying the principles of the present invention to a MEMS device; the present invention is not limited in this regard, and its principles may be applied to other suitable MEMS devices.
[0011] Furthermore, the term “support substrate” as used herein may be understood to include, inter alia, any suitable substrate, material, component, or layer, for example, silicon, which may be used to support a MEMS device...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Briefly, a reduced substrate Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter or a low-loss FBAR Radio Frequency filter, and a process and a system to produce the same. A reduced substrate MEMS device in accordance with embodiments of the present invention may include a membrane bonded between packaging parts. A process in accordance with embodiments of the present invention may include bonding a first packaging part to a MEMS device including a support substrate, removing the support substrate, and bonding a second packaging part to the MEMS device.
Description
BACKGROUND OF THE INVENTION [0001] In the field of Micro-Electro-Mechanical Systems (MEMS), devices may use or include extremely small mechanical devices. For example, in current MEMS technologies, a Film Bulk Acoustic Resonator (FBAR) Radio Frequency (RF) filter includes a thin membrane and a support substrate, for example, a silicon substrate. [0002] Certain MEMS devices, for example, FBAR filters that comply with RF communication specifications, e.g., insertion loss specifications, require minimizing loss of RF energy during operation. In such devices, RF energy may be lost due to undesired parasitic capacitance between metal conductors of the FBAR RF filter and its silicon substrate during operation of the filter. Such conductors may pass on top of the silicon substrate of the filter, and may be separated from the silicon substrate by a thin dielectric layer, for example, epoxy glue or a similar polymer. The undesired parasitic capacitance, which may be caused by the relatively ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(United States)
IPC IPC(8): B81B3/00B81B7/00H03H3/007H03H3/02
CPCB81B7/0064B81C1/00158B81C2201/019H03H2003/027H03H3/0072H03H3/02B81C2203/0118
InventorBAR-SADEH, EYALTALALYEVSKY, ALEXANDERGINSBURG, EYAL
OwnerINTEL CORP