Substrate support for in-situ dry clean chamber for front end of line fabrication
a technology of substrate support and dry cleaning chamber, which is applied in the direction of vacuum evaporation coating, semiconductor/solid-state device details, transportation and packaging, etc., can solve the problems of native oxides forming undesirable films on the substrate surface, affecting the subsequent fabrication process, and affecting the quality of substrates
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[0120] During etch, a gas mixture of 2 sccm of NF3, 10 sccm of NH3 and 2,500 sccm of argon was introduced into the chamber. A plasma of the gas mixture was ignited using 100 Watts of power. The bottom purge was 1,500 sccm of argon and the edge purge was 50 sccm of argon. The chamber pressure was maintained at about 6 Torr, and the substrate temperature was about 22° C. The substrate was etched for 120 seconds.
[0121] During subsequent annealing, the spacing was 750 mil and the lid temperature was 120° C. The substrate was annealed for about 60 seconds. About 50 angstroms of material was removed from the substrate surface. No anneal effect was observed. The etch rate was about 0.46 angstroms per second (28 Å / min). The observed etch uniformity was about 5% for the 50 Å etch.
[0122] Unless otherwise indicated, all numbers expressing quantities of ingredients, properties, reaction conditions, and so forth, used in the specification and claims are to be understood as approximations. Thes...
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