Substrate support for in-situ dry clean chamber for front end of line fabrication

a technology of substrate support and dry cleaning chamber, which is applied in the direction of vacuum evaporation coating, semiconductor/solid-state device details, transportation and packaging, etc., can solve the problems of native oxides forming undesirable films on the substrate surface, affecting the subsequent fabrication process, and affecting the quality of substrates
US20050221552A1Inactive Publication Date: 2005-10-06APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
APPLIED MATERIALS INC
Publication Date
2005-10-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a divisional of copending U.S. patent application Ser. No. 11 / 063,645 filed on Feb. 22, 2005, which claims benefit of U.S. provisional patent application Ser. No. 60 / 547,839, filed Feb. 26, 2004, which are herein incorporated by reference.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] Embodiments of the present invention generally relate to semiconductor processing equipment. More particularly, embodiments of the present invention relate to a chemical vapor deposition (CVD) system for semiconductor fabrication and in situ dry cleaning methods using the same.

[0004] 2. Description of the Related Art

[0005] A native oxide typically forms when a substrate surface is exposed to oxygen. Oxygen exposure occurs when the substrate is moved between processing chambers at atmospheric conditions, or when a small amount of oxygen remaining in a vacuum chamber contacts the substrate surface. Native oxides may...

Claims

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