Semiconductor device and method for manufacturing the same
a semiconductor device and dielectric layer technology, applied in the direction of transistors, solid-state devices, capacitors, etc., can solve the problems of significant increase in leakage current, increase leakage current, and substantial amount of oxygen non-stoichiometry in the high-k dielectric layer, so as to improve the leakage current characteristics of the dielectric layer, the effect of effective densification
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first embodiment
[0041]FIGS. 1A through 1D illustrate a method of manufacturing a capacitor of a semiconductor memory device according to the present invention. Referring to FIG. 1A, a lower electrode 20 is formed on a semiconductor substrate 10 to a thickness of approximately tens to hundreds of angstroms (Å). The lower electrode 20 can be formed, for example, of polysilicon, a metal nitride, or a noble metal. For instance, the lower electrode 20 may be formed of a single layer of doped polysilicon, TiN, TaN, WN, Ru, Ir, or Pt, or a composite layer of TiN, TaN, WN, Ru, Ir, or Pt. When the lower electrode 20 is formed of doped polysilicon, the surface of the lower electrode 20 is subjected to rapid thermal nitridation (RTN) to form a silicon nitride layer (not shown) on the lower electrode 20. This prevents the lower electrode 20 from being oxidized during subsequent thermal processes.
[0042] Referring to FIG. 1B, an HfO2 dielectric layer 30 is formed on the lower electrode 20 to a thickness of about...
second embodiment
[0052]FIGS. 8A through 8F are partial cross-sectional views illustrating a method for manufacturing a capacitor of a semiconductor memory device according to the present invention. Referring to FIG. 8A, a lower electrode 120 is formed on a semiconductor substrate 110 to an approximate thickness of tens to hundreds of angstroms (Å). The lower electrode 120 can be formed using the same or similar methods described above.
[0053] Referring to FIG. 8B, an Al2O3 dielectric layer 132 is formed on the lower electrode 120. Preferably, the Al2O3 dielectric layer is formed to a thickness of about 20-60 Å. It is preferable that the Al2O3 dielectric layer be thicker than an HfO2 dielectric layer to be formed in a subsequent process. The reason for this will be described later.
[0054] The Al2O3 dielectric layer 132 may be formed by ALD. In this case, the Al2O3 dielectric layer 132 is deposited using trimethyl aluminium (TMA) as a first reactant and O3 as a second reactant at a temperature of about...
third embodiment
[0075]FIGS. 24A through 24F are partial cross-sectional views illustrating a method of manufacturing a capacitor of a semiconductor memory device according to the present invention.
[0076] When forming a capacitor upper electrode using a source gas containing chlorine atoms, such as TiCl4, leakage current characteristics tend to significantly degrade the operation of a capacitor having an HfO2 dielectric layer. Therefore, to improve the leakage current characteristics of the capacitor in which the upper electrode is formed using a Cl-containing source gas, a method for blocking the effect of the Cl atoms is desirable.
[0077] Referring to FIG. 24A, a lower electrode 220 is preferably formed on a semiconductor substrate 210 having a thickness in a range of about tens to hundreds of angstroms (Å). The lower electrode 220 may be formed using the same or similar methods as described above. Referring to FIG. 24B, an HfO2 dielectric layer 232 is formed on the lower electrode 220. The HfO2 d...
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Abstract
Description
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Application Information
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