Methods for manufacturing capacitors for semiconductor devices

Abstract

Capacitors for semiconductor devices and methods of fabricating such capacitors are provided The disclosed capacitor comprises an interlayer dielectric layer (ILD) pattern having an opening exposing a portion of the underlying semiconductor substrate, a silicide pattern formed on the exposed substrate, and a lower electrode covering an inner wall and bottom of the opening. A dielectric layer is formed on the lower electrode, and an upper electrode is disposed on the dielectric layer. The dielectric layer preferably comprises a high k-dielectric layer such as tantalum oxide. The disclosed method comprises forming an ILD pattern with an opening that exposes a portion of a semiconductor substrate forming an optional silicide pattern on the exposed substrate, forming a lower electrode on the inner wall of the opening and sequentially forming a dielectric layer and an upper electrode on the resulting structure.

Description

RELATED APPLICATION [0001] This application claims priority from Korean Patent Application No. 2002-06436, filed on, Feb. 5, 2002, the contents of which are herein incorporated by reference in their entirety. [0002] 1. Field of the Invention [0003] The present invention relates to semiconductor devices and methods of fabricating such devices. More specifically, the present invention is directed to semiconductor devices having utilizing a metal-insulator-metal (MIM) capacitor structure (hereinafter referred as an MINI capacitor), and methods of fabricating the same. [0004] 2. Background of the Invention [0005] To reduce fabrication costs of semiconductor devices, it is necessary to increase the level of integration of the semiconductor devices and minimize the number of fabricating steps. In the meantime, as portable electronic devices like cellular phones, camcorders, and game machines have become popular, a need for embedded memory logic (EML) semiconductor devices having both memo...

AI Technical Summary

Benefits of technology

[0013] The present invention provides capacitors for semiconductor devices that are both adequate for incorporation in EML semiconductor devices and may be produced more simply and less expensively.

[0014] The present invention also provides methods for fabricating capacitors for semiconductor devices that allow for fabricating EML semiconductor devices more simply and / or less expensively.

Problems solved by technology

However, as a result of the relatively extreme height h1 of the lower electrode 50, DRAM fabrication processes are generally not compatible with those of more planar logic circuits.

As a result, attempts to combine these processes makes it difficult to simplify the fabrication of EML semiconductor devices, and this may actually increase the fabrication costs and complexity.

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