Method and its apparatus for inspecting a pattern

Abstract

In a pattern inspecting apparatus, images of places which can be expected to be the same pattern are compared with one another. However, a comparison of images obtained by different stage scans and the occurrence of a place capable of being inspected only once lead to a deterioration in the performance of detecting various error defects and an area incapable of being inspected, respectively. For solving this problem, defects detected in a high sensitivity condition are regarded as defect candidates and a critical threshold value, used as a boundary to detect a smaller value as a defect, of a defect candidate portion is obtained by an image processing circuit or an image of the defect candidate portion is obtained by processing with software. Further, the critical threshold value thus obtained is compared with plural threshold values, thereby permitting plural inspection results to be obtained in a single inspection.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] This application is a Continuation of U.S. application Ser. No. 10 / 062,632, filed Feb. 5, 2002, which claims prior from Japanese Patent Application No. 2001-207213, filed on Jul. 9, 2001, the contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The present invention relates to an apparatus for fabricating a substrate having a circuit pattern of, for example, a semiconductor device or a liquid crystal display. More particularly, the invention is concerned with a technique for inspecting a pattern on a substrate during manufacture. [0003] Conventional electron beam type and optical type pattern inspecting apparatuses are disclosed in JP-A Nos. 258703 / 1993 and 160247 / 1999, respectively. More particularly, an example of an electron beam type inspection apparatus is disclosed in the JP-A No. 258703 / 1993, the construction of which is shown in FIG. 1. [0004] As seen in FIG. 1, an electron beam 2 emitted from...

AI Technical Summary

Problems solved by technology

If a difference from the reference image is recognized in an image-acquired area, it is judged to be a defect.

In the case of a SEM type inspection apparatus, if inspection is conducted plural times, irradiation of the electron beam is carried out plural times, with the result that the state of the object changes due to electron beam irradiation and the inspection is inaccurate in such a changed state of the object.

If the pattern density differs, the amplitude in detected signal quantity of a detected pattern differs because there is a limit in the resolution of the inspection system.

Therefore, even in the case of defects of the same size, if inspection is performed with uniform sensitivity, there arise both a detected place and an undetected place because of different background patterns.

Moreover, even defects of the same size differ in point of whether they can be critical or not.

Conversely, a place high in pattern density can be a critical defect even if it is a minute defect.

It is impossible to consider detection sensitivity, defect management and design information separately from one another.

However, a wafer pattern for a semiconductor device is constituted by a very complicated pattern, so by utilizing a mere simple regularity, it is impossible to set an area not to be inspected, nor is it possible to obtain plural inspection results in a single inspection.

But since this area not to be inspected, or a non-inspection area, is limited to pattern edges, it is impossible to set a non-inspection area at a required place, nor is it possible to obtain plural inspection results in a single inspection.

Besides, plural inspection results cannot be obtained in a single inspection.

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