Wear leveling in flash storage devices

Abstract

A method of wear leveling in a flash storage device comprising a plurality of data blocks is provided. The method comprises the steps of detecting a data error in a read of dynamic data from a first data segment of a first data block of the plurality of data blocks, correcting the data error, and moving the dynamic data from the first data segment to a second data segment in a second one of the plurality of data blocks.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims the benefit of priority under 35 U.S.C. §119 from U.S. Provisional Patent Application Ser. No. 61 / 075,709, entitled “SOLID STATE DEVICE,” filed on Jun. 25, 2008, the disclosure of which is hereby incorporated by reference in its entirety for all purposes.FIELD OF THE INVENTION[0002]The present invention relates to flash storage devices and, in particular, relates to improved wear leveling in flash storage devices.BACKGROUND OF THE INVENTION[0003]Flash memory is an improved form of Electrically-Erasable Programmable Read-Only Memory (EEPROM). Traditional EEPROM devices are only capable of erasing or writing one memory location at a time. In contrast, flash memory allows multiple memory locations to be erased or written in one programming operation. Flash memory can thus operate at higher effective speeds than traditional EEPROM.[0004]Flash memory enjoys a number of advantages over other storage devices. It gen...

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Benefits of technology

[0006]Various aspects of the subject disclosure solve the foregoing problem by providing improved wear leveling for flash storage devices. The wear leveling improves the lifespan of flash storage devices and improves the reliability of data access therefrom.

Problems solved by technology

Traditional EEPROM devices are only capable of erasing or writing one memory location at a time.

Due to flash memory's unique structure, however, each region of memory can only be rewritten a certain number of times before it can no longer reliably hold data.

Accordingly, if some regions of memory are written to and rewritten more frequently than others, the lifetime of a flash storage device may be unacceptably shortened by the early failure of those regions of the memory.

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