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Non-volatile semiconductor storage device and method of manufacturing the same

a semiconductor storage device and non-volatile technology, applied in semiconductor devices, digital storage, instruments, etc., can solve the problems of limited rewrite cycles of flash memory, and insufficient information write and read ra

Inactive Publication Date: 2010-08-26
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]One aspect of the present invention provides a non-volatile semiconductor storage device comprising memory cells, each memory cell arranged at an intersection between a first wiring and a second wiring intersecting each other, each of the memory cells comprising: a first electrode layer; a plurality of variable resistance layers laminated on the first electrode layer and functioning as variable resistance elements; a second electrode layer formed between the variable resistance layers; and a third electrode layer formed on the top one of the variable resistance layers, each of the variable resistance layers being composed of a material containing carbon.
[0012]Another aspect of the pr

Problems solved by technology

However, the flash memory has a limited number of rewrite cycles due to degradation in characteristics associated with charge injection into recording layers.
In addition, problems arise due to insufficient information write and read rate.
This excessive current may result in destruction of wirings, transistors, diodes, or the like.
However, the more the faulty bits, the larger the area to be reserved for redundant repair circuits, which would result in larger chip area, i.e., increased manufacturing costs.

Method used

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Examples

Experimental program
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first embodiment

Circuit Configuration of Non-Volatile Semiconductor Storage Device in First Embodiment

[0032]Referring first to FIG. 1, a circuit configuration of a non-volatile semiconductor storage device according to a first embodiment of the present invention will be described below. FIG. 1 is a circuit diagram of the non-volatile semiconductor storage device according to the first embodiment.

[0033]As illustrated in FIG. 1, the non-volatile semiconductor storage device in the first embodiment comprises: a memory cell array 10; a word-line selection circuit 20a; a word-line driving circuit 20b; a bit-line selection circuit 30a; and a bit-line driving circuit 30b.

[0034]As illustrated in FIG. 1, the memory cell array 10 includes word lines WL (WL1, WL2) and bit lines BL (BL1, BL2) intersecting each other, and memory cells MC (MC1,1> to MC2,2>) positioned at respective intersections between the word lines WL and the bit lines BL. The word lines WL are arranged in the y direction with a predetermin...

second embodiment

Circuit Configuration of Non-Volatile Semiconductor Storage Device in Second Embodiment

[0102]Referring now to FIG. 13, a circuit configuration of a non-volatile semiconductor storage device according to a second embodiment will be described below. FIG. 13 is a circuit diagram of the non-volatile semiconductor storage device in the second embodiment. Note that the same reference numerals represent the same components as the first embodiment, and description thereof will be omitted in the second embodiment.

[0103]As illustrated in FIG. 13, the non-volatile semiconductor storage device in the second embodiment has a memory cell array 10a different from the first embodiment. The memory cell array 10a has memory cells MCa (MCa1, 1> to MCa2, 2>). As in the first embodiment, each of the memory cells MCa includes variable resistance elements R1 and R2 as well as a diode DI. Each of the memory cells MCa has a different connection relationship between the variable resistance elements R1, R2 a...

third embodiment

Circuit Configuration of Non-Volatile Semiconductor Storage Device in Third Embodiment

[0108]Referring now to FIG. 15, a circuit configuration of a non-volatile semiconductor storage device according to a third embodiment will be described below. FIG. 15 is a circuit diagram of the non-volatile semiconductor storage device in the third embodiment. Note that the same reference numerals represent the same components as the first and second embodiments, and description thereof will be omitted in the third embodiment.

[0109]As illustrated in FIG. 15, the non-volatile semiconductor storage device in the third embodiment has a memory cell array 10b different from the first embodiment. The memory cell array 10b has memory cells MCb (MCb1, 1> to MCb2, 2>). As in the first embodiment, each of the memory cells MCb includes variable resistance elements R1 and R2 as well as a diode DI. Each of the memory cells MCb has a different connection relationship between the variable resistance elements R...

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Abstract

A non-volatile semiconductor storage device includes memory cells, each of which is arranged at an intersection between a first wiring and a second wiring intersecting each other. Each of the memory cells includes: a first electrode layer; a plurality of variable resistance layers laminated on the first electrode layer and functioning as variable resistance elements; a second electrode layer formed between the variable resistance layers; and a third electrode layer formed on the top one of the variable resistance layers. Each of the variable resistance layers is composed of a material containing carbon.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2009-37645, filed on Feb. 20, 2009, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a non-volatile semiconductor storage device with a multi-layer structure of laminated memory cells and a method of manufacturing the same.[0004]2. Description of the Related Art[0005]With the popularization of mobile devices as well as the increase in the amount of data to be processed, demand for small, portable and large capacity non-volatile memory devices has grown. For example, NAND-type flash memory constitutes a large market that has been used for many applications, including mobile phones, digital cameras, digital movie cameras, etc. However, the flash memory has a limited number of rewrite cycles due to degradation in chara...

Claims

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Application Information

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IPC IPC(8): H01L47/00H01L21/00
CPCG11C13/0007G11C13/0069G11C2213/78H01L27/101H01L27/2409H01L27/2418H01L27/2463H01L45/06H01L45/065H01L45/1233H01L45/1253H01L45/149H01L45/1616H01L45/1675G11C2213/35H10B63/22H10B63/20H10B63/80H10N70/235H10N70/231H10N70/841H10N70/826H10N70/8845H10N70/023H10N70/063
Inventor YAMAMOTO, KAZUHIKOBABA, YASUYUKIKONNO, TAKUYA
Owner KK TOSHIBA